Na dosing control method

Patent metadata

Field	Value
Publication number	US-9601653-B2
Application number	US-201414303624-A
Country	US
Kind code	B2
Filing date	Jun 13, 2014
Priority date	Jun 13, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control.

First claim

What is claimed is:

1. A method, comprising:
placing at least two substrates on a substrate carrier at a distance from one another, the at least two substrates including a first content by weight of a first material, wherein the distance between the at least two substrates is arranged in proportional to the first content by weight of the first material and at least one processing parameter;
placing the substrate carrier in a reaction chamber; and
performing a first annealing process on the at least two substrates.

2. The method of claim 1 , wherein the first content by weight is between two percent and 12 percent by weight and the first material includes Na 2 O.

3. The method of claim 1 , wherein the first content by weight is at least four percent by weight and the first material includes K 2 O.

4. The method of claim 1 , wherein the at least two substrates include a second content by weight of a second material that is different from the first content by weight of the first material.

5. The method of claim 4 , wherein the first content by weight is between two percent and 12 percent by weight and the first material includes Na 2 O, and wherein the second content by weight is at least four percent by weight and the second material includes K 2 O.

6. The method of claim 1 , wherein the distance is between five mm and 100 mm.

7. The method of claim 6 , wherein the at least two substrates are positioned in a back-to-back arrangement.

8. The method of claim 6 , wherein the at least two substrates are positioned in a face-to-face arrangement.

9. The method of claim 1 , wherein the at least one processing parameter includes one of an annealing temperature and an annealing time.

10. The method of claim 1 , wherein the at least one processing parameter includes a concentration of H 2 Se.

11. The method of claim 1 , further comprising performing a second annealing process after the first annealing process.

12. A method, comprising:
placing at least two substrates on a substrate carrier at a distance from one another, the at least two substrates including a first content by weight of a first material and a second content by weight of a second material, wherein the distance between the at least two substrates is arranged in proportional to the first content by weight of the first material, the second content by weight of the second material, and at least one processing parameter;
placing the substrate carrier in a reaction chamber; and
performing a first annealing process on the at least two substrates.

13. The method of claim 12 , wherein the first content by weight is between two percent and 12 percent by weight and the first material includes Na 2 O.

14. The method of claim 13 , wherein the second content by weight is at least four percent by weight and the second material includes K 2 O.

15. The method of claim 12 , wherein the distance is between five mm and 100 mm.

16. The method of claim 15 , wherein the at least two substrates are positioned in a back-to-back arrangement.

17. The method of claim 15 , wherein the at least two substrates are positioned in a face-to-face arrangement.

18. A method, comprising:
placing at least two substrates on a substrate carrier at a distance from one another, the at least two substrates including between two percent and 12 percent by weight of Na 2 O and at least five percent by weight of K 2 O, wherein the distance between the at least two substrates is based on a content of the Na 2 O, a content of K 2 O, and at least one processing parameter;
placing the substrate carrier in a reaction chamber; and
performing a first annealing process on the at least two substrates.

19. The method of claim 18 , wherein the at least one processing parameter includes one of an annealing temperature, an annealing time, and a concentration of H 2 Se.

20. The method of claim 19 , wherein the distance is between five mm and 100 mm.

Assignees

• Tsmc Solar Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Xu Li
• Lee Wen-Chin

Classifications

• H10P14/6502

  of treatments performed before formation of the materials · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2907

  being Group IIIA-VA materials · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title