Epitaxial structure and method of manufacturing the same
US-2023357916-A1 · Nov 9, 2023 · US
characterised by intermediate layers between substrates and deposited layers
characterised by intermediate layers between substrates and deposited layers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/32 |
| Official title | {characterised by intermediate layers between substrates and deposited layers} |
| Display label | characterised by intermediate layers between substrates and deposited layers |
| Total patents | 82 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 7 |
| 2017 | 3 |
| 2018 | 4 |
| 2019 | 4 |
| 2020 | 9 |
| 2021 | 12 |
| 2022 | 5 |
| 2023 | 9 |
| 2024 | 8 |
| 2025 | 9 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Epitaxial structure and method of manufacturing the same
US-2023360910-A1 · Nov 9, 2023 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-11784045-B2 · Oct 10, 2023 · US
Semiconductor device having a multi-layer diffusion barrier and method of making the same
US-11742393-B2 · Aug 29, 2023 · US
Semiconductor device and manufacturing method thereof
US-11742248-B2 · Aug 29, 2023 · US
Laminated film, structure including laminated film, semiconductor element, electronic device, and method for producing laminated film
US-2023143194-A1 · May 11, 2023 · US
Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate
US-11365491-B2 · Jun 21, 2022 · US
Multi-layer diffusion barrier and method of making the same
US-2022190122-A1 · Jun 16, 2022 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-2022130669-A1 · Apr 28, 2022 · US
Semiconductor device having multi-layer diffusion barrier and method of making the same
US-11264467-B2 · Mar 1, 2022 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-11251042-B2 · Feb 15, 2022 · US
Gallium nitride-on-silicon devices
US-2021305419-A1 · Sep 30, 2021 · US
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US-11094537-B2 · Aug 17, 2021 · US
Method for direct patterned growth of atomic layer metal dichalcogenides with pre-defined width
US-11041236-B2 · Jun 22, 2021 · US
Gallium nitride-on-silicon devices
US-11038048-B2 · Jun 15, 2021 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-2021134594-A1 · May 6, 2021 · US
Semiconductor device with insulating layers forming a bonding plane between first and second circuit components, method of manufacturing the same, and electronic device
US-10998370-B2 · May 4, 2021 · US
Gallium nitride-on-silicon devices
US-2021098616-A1 · Apr 1, 2021 · US
Method for dividing a bar of one or more devices
US-2021090885-A1 · Mar 25, 2021 · US
Semiconductor device and manufacturing method thereof
US-2021082773-A1 · Mar 18, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/32?
- CPC H10P14/32 is the Cooperative Patent Classification code for “characterised by intermediate layers between substrates and deposited layers.”
- How many patents are filed under CPC H10P14/32 (characterised by intermediate layers between substrates and deposited layers)?
- Our database includes 82 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/32 growing?
- Publication counts under this code: 8 in 2024 vs 9 in 2025 (latest complete years).