Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Patent metadata

Field	Value
Publication number	US-11094537-B2
Application number	US-202016787700-A
Country	US
Kind code	B2
Filing date	Feb 11, 2020
Priority date	Oct 12, 2012
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

First claim

The invention claimed is:

1. A group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are indirectly bonded to each other,
wherein a joint film is interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other,
a shear joint strength between the support substrate and the group III nitride film being 4 MPa or more and 40 MPa or less, determined by a method in accordance with JIS K 6850,
a ratio of a joint area between the support substrate and the group II nitride film being 60% or more and 99% or less, determined by calculating a sum of areas detected as joint defects (void or peeling), dividing the sum by an area of a main surface of the support substrate, and multiplying the quotient by 100%.

2. A group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are indirectly bonded to each other,
wherein a joint film is interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other,
the joint film having a thickness variation of 2% or more and 40% or less, the thickness variation calculated in accordance with the following formula:
thickness variation (%)={(t max <t min )/(t max +t min )}×100%, the maximum value of the thickness (t max and minimum value of the thickness (t min ) taken from at least thirteen measurement points at substantially equal intervals across an entire surface of the joint film,

wherein the thickness variation is controlled by conditions of chemical mechanical polishing performed on the surface of the joint film.

3. The group III nitride composite substrate according to claim 2 , wherein the chemical mechanical polishing forms a mirror-finished surface having a RMS roughness of 0.3 nm or less.

4. The group III nitride composite substrate according to claim 2 , wherein the joint film has a thickness of 0.05 μm or more and 5 μm or less.

5. The group III nitride composite substrate according to claim 2 , wherein the joint film is a SiO 2 film, Si 3 N 4 film, AlN film, Al 2 O 3 film, TiO 2 film, TiN film, Ga 2 O 3 film, W film, Mo film, or Au-Sn film.

6. The group III nitride composite substrate according to claim 2 , wherein a ratio α III-N /α S of a thermal expansion coefficient α III-N of the group III nitride film to a thermal expansion coefficient αS of the support substrate is 0.75 or more and 1.25 or less, and a ratio t III-N /t s of a thickness t III-N of the group III nitride film to a thickness t s of the support substrate is 0.02 or more and 1 or less.

7. The group III nitride composite substrate according to claim 2 , wherein the support substrate has a thermal conductivity γ s of 3 W·m −1 ·K −1 or more and 280 W·m −1 ·K −1 or less.

8. The group III nitride composite substrate according to claim 2 , wherein the support substrate has a Young's modulus E s of 150 GPa or more and 500 GPa or less.

9. The group III nitride composite substrate according to claim 2 , wherein the diameter of the group III nitride composite substrate is 125 mm or more and 300 mm or less.

10. A laminated group III nitride composite substrate comprising:
the group III nitride composite substrate as recited in claim 2 ; and
at least one group III nitride layer disposed on a group III-nitride-film-side main surface of the group III nitride composite substrate.

11. A group III nitride semiconductor device comprising:
the group III nitride film included in the group III nitride composite substrate as recited in claim 2 ; and
at least one group III nitride layer disposed on the group III nitride film.

12. A method for manufacturing the group III nitride composite substrate as recited in claim 2 , the method comprising:
forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and
forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate.

13. A method for manufacturing the group III nitride composite substrate as recited in claim 2 , the method comprising:
forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and
forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate.

14. A method for manufacturing a group III nitride semiconductor device, the method comprising:
preparing the group III nitride composite substrate as recited in claim 2 ; and
growing at least one group III nitride layer on the group III nitride film of the group III nitride composite substrate.

15. The method for manufacturing a group III nitride semiconductor device according to claim 14 , further comprising:
bonding a device support substrate onto the group III nitride layer; and
removing the support substrate from the group III nitride composite substrate.

Assignees

• Sumitomo Electric Industries

Inventors

• Ishibashi Keiji
• Hachigo Akihiro
• Hiromura Yuki
• Matsumoto Naoki
• Nakahata Seiji
• Nakanishi Fumitake
• Yanagisawa Takuya
• Uematsu Koji
• Seki Yuki
• Yamamoto Yoshiyuki
• Yoshizumi Yusuke
• Mikami Hidenori

Classifications

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/129

  by polishing · CPC title

• H10P72/7424

  used as a support during the manufacture of self-supporting substrates · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title