Gallium nitride-on-silicon devices

Patent metadata

Field	Value
Publication number	US-11038048-B2
Application number	US-201916589915-A
Country	US
Kind code	B2
Filing date	Oct 1, 2019
Priority date	Oct 1, 2019
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

First claim

What is claimed is:

1. An electrical component device, comprising:
a buffer layer disposed over a substrate;
a first layer of gallium nitride disposed over the buffer layer;
a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and
an inductor positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.

2. The electrical component device of claim 1 , further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the third layer of p-doped gallium nitride layer.

3. The electrical component device of claim 2 , wherein the inductor is positioned over the third layer overlying the second layer.

4. The electrical component device of claim 1 , further comprising a trench formed from the backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.

5. The electrical component device of claim 1 , further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.

6. The electrical component device of claim 1 , wherein the inductor is one of a spiral inductor or a rectangular inductor.

7. The electronic component device of claim 1 , wherein the inductor is formed with a single metal layer.

8. The electronic component device of claim 1 , wherein the inductor is formed with multiple metal layers.

9. An electronic device, comprising:
an electrical component; and
an electrical component device comprising:
a buffer layer disposed over a substrate;
a first layer of gallium nitride disposed over the buffer layer;
a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and
an inductor positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the inductor is operably connected to the electrical component.

10. The electronic device of claim 9 , further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the third layer of p-doped gallium nitride layer.

11. The electronic device of claim 10 , wherein the inductor is positioned over the third layer overlying the second layer.

12. The electronic device of claim 9 , further comprising a trench formed from the backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.

13. The electronic device of claim 9 , further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.

14. The electronic device of claim 9 , wherein the electronic device is a microwave integrated circuit.

15. The electronic device of claim 9 , wherein the electronic device is a monolithic microwave integrated circuit.

16. The electronic device of claim 9 , wherein the inductor is formed with a single metal layer or with multiple metal layers.

17. A method of fabricating an electrical component device, comprising:
forming a buffer layer over a substrate;
forming a first layer of gallium nitride over the buffer layer;
forming a second layer of aluminum gallium nitride over the first layer;
forming a first two dimensional electron gas (2DEG) segment and a second 2DEG segment at an interface between the first layer and the second layer, wherein the first 2DEG segment is separated from the second 2DEG segment by a gap; and
disposing an inductor over the second layer and over at least a portion of the gap.

18. The method of claim 17 , wherein;
forming the first 2DEG segment and the second 2DEG segment comprises forming a third layer of a p-doped gallium nitride over a portion of the second layer, the gap between the first and the second 2DEG segments corresponding to a contour of the third layer; and
the inductor is disposed over the third layer overlying the second layer and at least a portion of the gap.

19. The method of claim 18 , further comprising patterning the third layer to form one or more openings in the third layer prior to disposing the inductor over the third layer, wherein an additional 2DEG segment is formed at the interface between the first layer and the second layer below each of the one or more openings in the third layer.

20. The method of claim 17 , wherein forming the first 2DEG segment and the second 2DEG segment comprises:
forming a trench through the 2DEG layer to produce the first 2DEG segment and the second 2DEG segment, wherein the trench comprises the gap; and
forming a dielectric material in the trench.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Jin Jun-De
• Chern Chan-Hong

Classifications

• H10P14/3416 Primary

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title