Method for direct patterned growth of atomic layer metal dichalcogenides with pre-defined width

Patent metadata

Field	Value
Publication number	US-11041236-B2
Application number	US-201916290407-A
Country	US
Kind code	B2
Filing date	Mar 1, 2019
Priority date	Mar 1, 2019
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

A method of growing patterns of an atomic layer of metal dichalcogenides, the method including providing a substrate, providing aligned patterns of carbon nanostructures on the substrate, providing a first metal portion in contact with a first portion of the patterns of carbon nanostructures and a second metal portion in contact with a second portion of the patterns of carbon nanostructures, depositing a salt layer on the substrate and the patterns of carbon nanostructures, resistively heating the patterns of carbon nanostructures to remove the patterns of carbon nanostructures and salt deposited thereon from the substrate, wherein removing the patterns of carbon nanostructures and salt deposited thereon from the substrate provides salt patterns on the substrate, and growing an atomic layer of metal dichalcogenides on the salt patterns, wherein the atomic layer of metal dichalcogenides is provided in aligned patterns each having a pre-defined width. Also disclosed are patterns of an atomic layer of metal dichalcogenides prepared according to the method of the disclosure.

First claim

What is claimed is:

1. A method of growing patterns of an atomic layer of metal dichalcogenides, the method comprising:
providing a substrate;
providing aligned patterns of carbon nanostructures on the substrate;
providing a first metal portion in contact with a first portion of the patterns of carbon nanostructures and a second metal portion in contact with a second portion of the patterns of carbon nanostructures;
depositing a salt layer on the substrate and the patterns of carbon nanostructures;
resistively heating the patterns of carbon nanostructures to remove the patterns of carbon nanostructures and salt deposited thereon from the substrate, wherein removing the patterns of carbon nanostructures and salt deposited thereon from the substrate provides salt patterns on the substrate; and
growing an atomic layer of metal dichalcogenides on the salt patterns
wherein the atomic layer of metal dichalcogenides is provided in aligned patterns each having a pre-defined width.

2. The method according to claim 1 , wherein the substrate comprises SiO 2 .

3. The method according to claim 1 , wherein the patterns of carbon nanostructures comprise strips of carbon nanostructures.

4. The method according to claim 1 , wherein the carbon nanostructures comprise carbon nanotubes.

5. The method according to claim 1 , wherein the first metal portion and/or the second metal portion comprises a metal selected from the group consisting of Ti, Cu, Au, and combinations thereof.

6. The method according to claim 1 , wherein the salt layer comprises NaBr.

7. The method according to claim 1 , wherein resistively heating the patterns of carbon nanostructures to remove the patterns of carbon nanostructures and salt deposited thereon from the substrate comprises:
providing an electrical network formed from a voltage source, the first metal portion, the second metal portion, a metal wiring, and the patterns of carbon nanostructures; and
flowing an electric current through the electrical network to etch at least a portion of the patterns of carbon nanostructures.

8. The method according to claim 7 , wherein about 100% of the patterns of carbon nanostructures and salt deposited thereon is removed from the substrate via resistive heating.

9. The method according to claim 7 , wherein the metal wiring comprises a metal selected from the group consisting of Ti, Cu, Au, and combinations thereof.

10. The method according to claim 1 , wherein the salt patterns comprise salt strips.

11. The method according to claim 10 , wherein each of the salt strips has a width of no more than about 5 nm.

12. The method according to claim 1 , wherein growing the atomic layer of metal dichalcogenides on the salt patterns comprises thermally co-depositing a metal oxide and a chalcogen onto the salt patterns.

13. The method according to claim 12 , wherein the metal oxide is selected from the group consisting of tungsten dioxide, tungsten trioxide, molybdenum dioxide, and combinations thereof, and
the chalcogen is selected from the group consisting of selenium, sulfur, and a combination thereof.

14. The method according to claim 13 , wherein the atomic layer of metal dichalcogenides comprises molybdenum disulfide.

15. The method according to claim 1 , wherein the pre-defined width is no more than about 5 nm.

16. The method according to claim 1 , wherein the aligned patterns of the atomic layer of metal dichalcogenides comprise ribbons of the atomic layer of metal dichalcogenides.

17. A method of patterned growth of metal dichalcogenides, the method comprising:
providing a substrate including a first end and a second end, and a plurality of carbon nanotubes that define patterns extending between the first end and the second end that partially cover the substrate;
depositing a salt layer on the substrate;
removing the patterns from the substrate to form alternating strips of exposed substrate and strips of salt-coated substrate that extend between the first end and the second end; and
growing a layer of metal dichalcogenides on the strips of salt-coated substrate.

18. The method of claim 17 , wherein the step of removing the patterns from the substrate comprises applying an electric current to the carbon nanotubes.

19. The method of claim 17 , wherein the step of providing a substrate comprises:
depositing a catalyst or catalyst precursor on the substrate adjacent the first end;
introducing a carbon source; and
growing carbon nanotubes to form the patterns.

20. The method of claim 19 , wherein the step of providing a substrate comprises:
depositing a first metal portion adjacent the first end of the substrate in contact with a first portion of the carbon nanotube patterns and depositing a second metal portion adjacent the second end of the substrate in contact with a second portion of the carbon nanotube patterns, and wherein the step of removing the patterns from the substrate comprises applying an electric current to the carbon nanotubes.

Assignees

• Honda Motor Co Ltd

Inventors

• Harutyunyan Avetik

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3436 Primary

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title