Semiconductor component comprising magnetic field sensor

Patent metadata

Field	Value
Publication number	US-2016064451-A1
Application number	US-201514792289-A
Country	US
Kind code	A1
Filing date	Jul 6, 2015
Priority date	Dec 8, 2006
Publication date	Mar 3, 2016
Grant date	—

Abstract

The invention relates to a semiconductor component ( 100 ) comprising a semiconductor chip ( 10 ) configured as a wafer level package, a magnetic field sensor ( 11 ) being integrated into said semiconductor chip.

First claim

What is claimed is:

1 . Semiconductor component comprising a semiconductor chip configured as a wafer level package, a magnetic field sensor being integrated into said semiconductor chip.

2 . Semiconductor component according to claim 1 , wherein a magnet is applied to a first main surface of the semiconductor chip.

3 . Semiconductor component according to claim 2 , wherein the magnet is a layer made of a permanent-magnetic material that is deposited on the first main surface of the semiconductor chip.

4 . Semiconductor component according to claim 2 , wherein the magnet is an integral permanent magnet mounted onto the first main surface of the semiconductor chip.

5 . Semiconductor component according to claim 2 , 20 wherein the first main surface is the active main surface ofthe semiconductor chip.

6 . Semiconductor component according to claim 1 , wherein external contact elements are applied to the active main surface of the semiconductor chip.

7 . Semiconductor component according to claim 6 , wherein the external contact elements have an underbump metallization.

8 . Semiconductor component according to claim 6 , wherein the external contact elements have solder deposits arranged in particular in flip-chip-like fashion.

9 . Semiconductor component according to claim 6 , wherein a rewiring layer is arranged between the semiconductor chip and the external contact elements.

10 . Semiconductor component according to claim 1 , wherein the semiconductor chip is configured as a position sensor or rate-of-rotation sensor or as a part of a position sensor or rate-of-rotation sensor.

11 . Semiconductor component comprising:
a semiconductor chip, into which a magnetic field sensor is integrated, and external contact elements applied to an active main surface of the semiconductor chip.

12 . Semiconductor component according to claim 11 , wherein a magnet is applied to a first main surface of the semiconductor chip.

13 . Semiconductor component according to claim 12 , wherein the magnet is a layer made of a permanent-magnetic material that is deposited on the first main surface of the semiconductor chip.

14 . Semiconductor component according to claim 12 , wherein the magnet is an integral permanent magnet mounted onto the first main surface of the semiconductor chip.

15 . Semiconductor component according to claim 11 , wherein the external contact elements have an underbump metalization.

16 . Semiconductor component according to claim 11 , wherein the external contact elements have solder deposits arranged in particular in flip-chip-like fashion.

17 . Semiconductor component according to claim 11 , wherein a rewiring layer is arranged between the active main surface of the semiconductor chip and the external contact elements.

18 . Method in which
a carrier is provided, which comprises a plurality of integrated circuits, wherein at least one first one of the integrated circuits comprises a magnetic field sensor, external contact elements are applied to a main surface of the carrier, and the integrated circuits are singulated after the application of the external contact element.

19 . Method according to claim 18 , wherein the carrier is a semiconductor wafer.

20 . Method according to claim 18 , wherein the magnetic field sensor and the external contact elements are arranged at the same main surface of the carrier.

21 - 32 . (canceled)

Assignees

• Infineon Technologies Ag

Inventors

• Theuss Horst
• Auburger Albert

Classifications

• H01L43/04

  Electricity · mapped topic

• H01L27/22 Primary

  Electricity · mapped topic

• H01L43/14

  Electricity · mapped topic

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title

• G01R33/0005 Primary

  Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types (G01R33/0206 takes precedence) · CPC title