Magnetoresistive sensor module on the planar surface

Patent metadata

Field	Value
Publication number	US-9423472-B2
Application number	US-201514972648-A
Country	US
Kind code	B2
Filing date	Dec 17, 2015
Priority date	Feb 23, 2005
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

First claim

What is claimed is:

1. A magnetoresistive sensor module, comprising:
an arrangement having a semiconductor substrate, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate, and a metal-insulator arrangement, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a plurality of structured metal sheets with surrounding insulation layers, wherein the structured metal sheets are electrically connected to the semiconductor circuit arrangement;
a first metal filled via and a second metal filled via through a topmost layer of the insulation material, the first metal filled via being electrically connected to a first portion of the top most structured metal sheet, and the second metal filled via being electrically connected to a second portion of the topmost structured metal sheet, the first portion being electrically isolated from the second portion;
the first and second metal filled via ending flush with a surface of the topmost layer of the insulation material so as to achieve a planar surface of the insulation material and the first and second metal filled via; and
a magnetoresistive sensor structure, which is applied on the planar surface of the topmost layer of insulation material of the metal-insulator arrangement and over the first and second metal filled vias, so as to establish an electrical connection between the magnetoresistive sensor structure and the first and second portion of the topmost structured metal sheet, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

2. A magnetoresistive sensor module according to claim 1 , wherein at least one of the structured metal sheets is formed as a light shield effective for illumination.

3. The magnetoresistive sensor module of claim 1 , wherein at least one of the structured metal sheets is arranged to be effective as a heat barrier or heat dissipater with regard to illumination.

4. The magnetoresistive sensor module of claim 1 , wherein the metal-insulator arrangement comprises a plurality of structured metal sheets and insulation layers, with the insulation layers at least partly surrounding the structured metal sheets, vertically above the semiconductor substrate, wherein the plurality of metal sheets are formed to provide the light shield for the semiconductor circuit arrangement.

5. A magnetoresistive sensor module comprising:
a semiconductor substrate with a semiconductor circuit arrangement integrated adjacent to a main surface of the semiconductor substrate;
a metal-insulator arrangement on top of the main surface, the metal-insulator arrangement comprising at least one structured metal sheet; a first portion of the at least one structured metal sheet and a second portion of the at least one structured metal sheet being in electrical contact with terminals of the semiconductor circuit arrangement, the first portion being electrically isolated from the second portion;
a magnetoresistive sensor structure arranged on top of the metal-insulator arrangement;
a first metal filled via extending up from the first portion of the at least one structured metal layer forming an electrical contact to a first end portion of the magnetoresistive sensor structure; and
a second metal filled via extending up from the second portion of the at least one structured metal layer forming a further electrical contact to a second end portion of the magnetoresistive sensor structure.

6. The magnetoresistive sensor module according to claim 5 , wherein the first metal filled via and the second metal filled via are configured as contacts that cause a variable resistance to be defined by the magnetoresistive sensor structure.

7. The magnetoresistive sensor module according to claim 5 , wherein the first metal filled via and the second metal filled via are configured as contacts that cause a variable resistance to be defined by the magnetoresistive sensor structure including the first end portion and the second end portion.

8. The magnetoresistive sensor module according to claim 5 , wherein the first end portion and the second end portion of the magnetoresistive sensor structure are fully functional enabled for sensing.

Assignees

• Infineon Technologies Ag

Inventors

• Kolb Stefan
• Pruegl Klemens
• Zimmer Juergen

Classifications

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H01L43/12

  Electricity · mapped topic

• G01R33/09 Primary

  Magnetoresistive devices · CPC title