Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching gaas
US-2016372624-A1 · Dec 22, 2016 · US
III-V nitrides, e.g. GaN
III-V nitrides, e.g. GaN · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10F77/1246 |
| Official title | {III-V nitrides, e.g. GaN} |
| Display label | III-V nitrides, e.g. GaN |
| Total patents | 416 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 39 |
| 2016 | 52 |
| 2017 | 57 |
| 2018 | 48 |
| 2019 | 49 |
| 2020 | 43 |
| 2021 | 32 |
| 2022 | 35 |
| 2023 | 15 |
| 2024 | 20 |
| 2025 | 22 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Exfoliation
US-2016340533-A1 · Nov 24, 2016 · US
Method of manufacturing structures of LEDs or solar cells
US-9478707-B2 · Oct 25, 2016 · US
Semiconductor photo-detecting device
US-9478690-B2 · Oct 25, 2016 · US
Method for the reuse of gallium nitride epitaxial substrates
US-2016307801-A1 · Oct 20, 2016 · US
Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
US-2016300825-A1 · Oct 13, 2016 · US
Silicon heterojunction photovoltaic device with wide band gap emitter
US-2016284916-A1 · Sep 29, 2016 · US
Enhanced deep ultraviolet photodetector and method thereof
US-2016284919-A1 · Sep 29, 2016 · US
Light Emitting Diodes and Photodetectors
US-2016233370-A1 · Aug 11, 2016 · US
Planar nonpolar group-iii nitride films grown on miscut substrates
US-2016230312-A1 · Aug 11, 2016 · US
Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US-9404197-B2 · Aug 2, 2016 · US
Optoelectronic semiconductor component and method for producing a mirror region on a semiconductor body
US-9397268-B2 · Jul 19, 2016 · US
Method to make buried, highly conductive p-type iii-nitride layers
US-2016197151-A1 · Jul 7, 2016 · US
Silicon heterojunction photovoltaic device with wide band gap emitter
US-9373743-B2 · Jun 21, 2016 · US
Planar nonpolar group-III nitride films grown on miscut substrates
US-9340899-B2 · May 17, 2016 · US
Optoelectronic device and method for manufacturing same
US-9331242-B2 · May 3, 2016 · US
Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
US-9331233-B2 · May 3, 2016 · US
Optoelectronic device and method for manufacturing same
US-2016111593-A1 · Apr 21, 2016 · US
High efficiency broadband semiconductor nanowire devices
US-9240516-B2 · Jan 19, 2016 · US
Production of Free-Standing Crystalline Material Layers
US-2016002822-A1 · Jan 7, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10F77/1246?
- CPC H10F77/1246 is the Cooperative Patent Classification code for “III-V nitrides, e.g. GaN.”
- How many patents are filed under CPC H10F77/1246 (III-V nitrides, e.g. GaN)?
- Our database includes 416 publications tagged with this CPC code.
- Is patent activity under CPC H10F77/1246 growing?
- Publication counts under this code: 20 in 2024 vs 22 in 2025 (latest complete years).