Light Emitting Diodes and Photodetectors

Patent metadata

Field	Value
Publication number	US-2016233370-A1
Application number	US-201415024191-A
Country	US
Kind code	A1
Filing date	Oct 15, 2014
Priority date	Oct 15, 2013
Publication date	Aug 11, 2016
Grant date	—

Abstract

The present application relates generally to light emitting diodes and photodetectors as well as their methods of manufacture and use. In one exemplary embodiment, an integrated device may include a substrate, a light emitting diode formed on the substrate, and a photodetector formed on the substrate. In another embodiment, a device may include a light emitting diode formed on a substrate, and the light emitting diode may act as both a solid state light and as an optical transmitter.

First claim

1 . An integrated device comprising:
a substrate; a light emitting diode formed on the substrate; and a photodetector formed on the substrate; wherein the photodetector is configured to be blind to emissions from the light emitting diode.

2 . The integrated device of claim 1 , wherein the light emitting diode and the photodetector are formed with one or more layers comprising III-nitride.

3 . The integrated device of claim 2 , wherein the one or more layers comprise at least one of gallium nitride (GaN) and indium gallium nitride (InGaN).

4 . The integrated device of claim 1 , wherein the light emitting diode is configured to function as an optical transmitter and the photodetector is configured to function as an optical receiver.

5 . The integrated device of claim 4 , wherein the light emitting diode is also configured to function as a solid-state light.

6 . The integrated device of claim 1 , wherein the photodetector and the light emitting diode receive and send signals between each other without cross-talk between components adjacent to the light emitting diode and the photodetector.

7 . The integrated device of claim 1 , wherein the light emitting diode is configured to emit wavelengths in the visible spectrum and the photodetector is configured to receive wavelengths in the ultraviolet spectrum.

8 . The integrated device of claim 1 , wherein the photodetector comprises at least one of a pn junction photodetector, p-i-n junction photodetector, and a metal-semiconductor-metal photo detector.

9 . The integrated device of claim 1 , wherein the photodetector comprises at least one of a Schottky barrier photodetector.

10 . A device comprising:
a light emitting diode formed on a substrate, wherein the light emitting diode is configured to function as both a solid state light and as an optical transmitter; a photodetector formed on the substrate; wherein the photodetector is configured to be blind to emissions from the light emitting diode.

11 . (canceled)

12 . The device of claim 10 , wherein the photodetector is configured to function as an optical receiver.

13 . The device of claim 10 , wherein the photodetector and the light emitting diode receive and send signals between each other without cross-talk between components adjacent to the light emitting diode and the photodetector.

14 . The device of claim 10 , wherein the light emitting diode is configured to emit wavelengths in the visible spectrum and the photodetector is configured to receive wavelengths in the ultraviolet spectrum.

15 . The device of claim 10 , wherein the photodetector comprises at least one of a p-n junction photodetector, p-i-n junction photodetector, and a metal-semiconductor-metal photodetector.

16 . The device of claim 10 , wherein the photodetector comprises a Schottky barrier photodetector.

17 . An optical communication system comprising:
a first transmitting light emitting diode associated with a first receiving photodetector; a second transmitting light emitting diode associated with a second receiving photodetector, wherein the first receiving photodetector is configured to be blind to the first light emitting diode and configured to receive emissions from the second light emitting diode, and wherein the second receiving photodetector is configured to be blind to the second light emitting diode and configured to receive emissions from the first light emitting diode.

18 . The optical communication system of claim 17 , wherein the first light emitting diode is configured to emit light in the visible spectrum, wherein the first receiving photodetector is configured to receive light in the ultraviolet spectrum, wherein the second light emitting diode is configured to emit light in the ultraviolet spectrum, and wherein the second receiving photodetector is configured to receive light in the visible spectrum.

19 . The optical communication system of claim 17 , wherein at least one of the first light emitting diode and second light emitting diode is also configured to function as a solid state light.

20 . The optical communication system of claim 17 , wherein the first photodetector and second photodetector comprise a Schottky barrier photodetector.

21 . The optical communication system of claim 17 , wherein the first light emitting diode and first receiving photodetector are formed on a first substrate, and wherein the first light emitting diode and first receiving photodetector are formed on a second substrate.

Assignees

• Penn State Res Found

Inventors

• Jiang Zhenyu
• Xu Jian
• Liu Jie

Classifications

• H10H29/10 Primary

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10F77/12485

  comprising nitride compounds, e.g. InGaN · CPC title

• H10F77/1246

  III-V nitrides, e.g. GaN · CPC title