Optoelectronic semiconductor component and method for producing a mirror region on a semiconductor body

Patent metadata

Field	Value
Publication number	US-9397268-B2
Application number	US-201314420883-A
Country	US
Kind code	B2
Filing date	Aug 1, 2013
Priority date	Aug 10, 2012
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component comprises a semiconductor body having a main surface and a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the minor region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains.

First claim

The invention claimed is:

1. An optoelectronic semiconductor component, comprising:
a semiconductor body having a main surface; and
a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the mirror region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains;
wherein a material of the semiconductor body which adjoins the main surface is based on p-conductively doped nitride semiconductor material;
wherein the first material composition comprises one or more materials selected from the group consisting of rhodium, iridium and osmium;
wherein the domains along the main surface at least partly have a maximum extent of at most 100 nm; and
wherein the mirror layer contains silver.

2. The optoelectronic semiconductor component according to claim 1 , wherein the first material composition contains a metal from the platinum group metals.

3. The optoelectronic semiconductor component according to claim 1 , wherein the first material composition is selected from the group consisting of ruthenium, rhodium, palladium, iridium and osmium.

4. The optoelectronic semiconductor component according to claim 1 , wherein the mirror layer in the mirror region adjoins the main surface with a surface occupation density of at least 50%.

5. The optoelectronic semiconductor component according to claim 1 , wherein the mirror layer in the mirror region adjoins the main surface with a surface occupation density of at least 80%.

6. The optoelectronic semiconductor component according to claim 1 , wherein the domains along the main surface at least partly have a maximum extent of at most 100 nm.

7. The optoelectronic semiconductor component according to claim 1 , wherein the mirror region along the main surface has a micro-structuring with domain regions and domain-free regions.

8. The optoelectronic semiconductor component according to claim 7 , wherein the domain regions and the domain-free regions are arranged alternately in a periodic pattern at least regionally.

9. The optoelectronic semiconductor component according to claim 7 , wherein the mirror region along the main surface has a continuous first partial region and a continuous second partial region,
wherein the first partial region and the second partial region in each case constitute at least 20% of the mirror region, and
wherein a surface occupation of the domain-free regions in the first partial region is greater than that in the second partial region by at least 20%.

10. The optoelectronic semiconductor component according to claim 9 , wherein a surface centroid of the semiconductor body lies within the first partial region in a plan view of the optoelectronic semiconductor component.

11. A method comprising:
providing a semiconductor body, the semiconductor body having a main surface;
depositing a first material composition on the main surface with a thickness of at most 5 nm, such that domains of the first material composition form on the main surface;
subjecting the first material composition to a heat treatment such that an average extent of the domains along the main surface decreases; and
depositing a second material composition on the main surface after subjecting the first material composition to a heat treatment, thereby forming a continuous mirror layer which adjoins the main surface at least regionally between the domains.

12. The method according to claim 11 , further comprising:
forming a mask on the main surface before depositing the first material composition such that the first material composition is deposited on the main surface only in the unmasked regions; and
removing the mask before depositing the second material composition.

13. An optoelectronic semiconductor component, comprising:
a semiconductor body having a main surface; and
a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the mirror region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains;
wherein the mirror region along the main surface has a micro-structuring with domain regions and domain-free regions; and
wherein the mirror region along the main surface has a continuous first partial region and a continuous second partial region;
wherein the first partial region and the second partial region each constitute at least 20% of the mirror region; and
wherein a surface occupation of the domain-free regions in the first partial region is greater than a surface occupation of the domain-free regions in the second partial region by at least 20%.

14. The optoelectronic semiconductor component according to claim 13 , wherein a maximum extent of the plurality of domains in a direction along the main surface is, at least for some of the plurality of domains, at most 20 nm.

15. The optoelectronic semiconductor component according to claim 13 , wherein a surface centroid of the semiconductor body lies within the first partial region in a plan view of the semiconductor component.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Pfeuffer Alexander F

Classifications

• H10H20/034

  of coatings · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10F77/1246

  III-V nitrides, e.g. GaN · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title