Large area, low-defect gallium-containing nitride crystals, method of making, and method of use

Patent metadata

Field	Value
Publication number	US-9404197-B2
Application number	US-201213600191-A
Country	US
Kind code	B2
Filing date	Aug 30, 2012
Priority date	Jul 7, 2008
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

First claim

What is claimed is:

1. An ultralow defect gallium-containing nitride crystal comprising:
gallium and nitrogen and having a wurtzite crystal structure;
a first large area surface and a second large area surface being on the opposite sides of the crystal, and the first large area surface and the second large area surface being substantially parallel to one another and having a maximum dimension greater than about 10 millimeters; wherein
the first large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −60 degrees and about +60 degrees toward a [0001]+c-direction and by up to about 10 degrees toward an orthogonal <1-210>a-direction;
at least one of the first large area surface and the second large area surface is characterized by a dislocation density below about 10 4 cm −2 and by a stacking fault concentration below about 10 cm −1 , as determined by etching, in a solution comprising one or more of H 3 PO 4 , H 3 PO 4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H 2 SO 4 , at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours; wherein the temperature and the time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers; and
the crystal comprises at least two single crystal domains having a gallium-containing nitride composition, wherein the at least two single crystal domains comprise a dislocation density within the domain less than about 10 4 cm −2 , are separated by a line of dislocations with a linear density less than about 1×10 5 cm −1 , a polar misorientation angle γ between the first domain and the second domain is between about 0.01 degree and about 0.5 degree, and azimuthal misorientation angles α and β are between about 0.01 degree and about 1 degree.

2. The crystal of claim 1 , wherein the second large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −60 degrees and about +60 degrees toward a [0001] +c-direction and by up to about 10 degrees toward an orthogonal <1-210>a-direction.

3. The crystal of claim 1 , wherein the crystallographic orientation of the first large-area surface has a crystallographic orientation that is miscut form a {10-10} m-plane by between about −30 degrees and about +30 degrees toward a [0001] +c-direction and by up to about 5 degrees toward an orthogonal <1-210>a-direction.

4. The crystal of claim 1 , wherein the crystallographic orientation of the first large-area surface is miscut from a {10-10} m-plane by between about −5 degrees and about +5 degrees toward a [0001] +c-direction and by up to about 1 degree toward an orthogonal <1-210>a-direction.

5. The crystal of claim 1 , wherein the crystallographic orientation of the first large-area surface is within about 5 degrees of a semipolar orientation selected form a {60-6±1} plane, a {50-5±1} plane, a {40-4±1} plane, a {30-3±1} plane, a {50-5±2} plane, a {70-7±3} plane, a {20-2±1} plane, a {30-3±2} plane, a {40-4±3} plane, a {50-5±4} plane, a {10-1±1} plane, a {10-1±2} plane, and a {10-1±3} plane.

6. The crystal of claim 1 , wherein the first large-area surface is characterized by an impurity concentration of oxygen (O) between about 1×10 16 cm −3 and 1×10 19 cm −3 ; an impurity concentration of hydrogen (H) between 1×10 16 cm −3 and 2×10 19 cm −3 ; and an impurity concentration of at least one of fluorine (F) and chlorine (Cl) between 1×10 15 cm −3 and 1×10 17 cm −3 .

7. The crystal of claim 1 , wherein the first large-area surface is characterized by an impurity concentration of oxygen (O) between about 1×10 16 cm −3 and 1×10 19 cm −3 ; an impurity concentration of hydrogen (H) between 1×10 16 cm −3 and 2×10 19 cm −3 ; and an impurity concentration of at least one of sodium (Na) and potassium (K) between about 3×10 15 cm −3 and 1×10 18 cm −3 .

8. The crystal of claim 1 , wherein the crystal comprises a substantially wurtzite structure that is substantially free of other crystal structures, the other crystal structures being less than about 1% in volume than a volume of the substantially wurzite structure.

9. The crystal of claim 1 , wherein the first large-area surface comprises a root-mean-square surface roughness measured over a 10-micrometer by 10-micrometer area that is less than about 1 nanometer.

10. The crystal of claim 1 , wherein at least one of the first large area surface and second large area surface is characterized by a dislocation density below about 10 3 cm −2 and by a stacking fault concentration below about 1 cm −1 .

11. The crystal of claim 1 , further comprising a semiconductor structure fabricated on the first large area surface, the semiconductor structure comprising at least one Al x In y Ga (1-x-y) N epitaxial layer, wherein 0≦x, y, x+y≦1.

Assignees

• D'Evelyn Mark P
• Ehrentraut Dirk
• Jiang Wenkan
• Downey Bradley C
• Soraa Inc

Inventors

• D'Evelyn Mark P
• Ehrentraut Dirk
• Jiang Wenkan
• Downey Bradley C

Classifications

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B7/105

  using ammonia as solvent, i.e. ammonothermal processes · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• C30B25/02 Primary

  Epitaxial-layer growth · CPC title