Semiconductor photo-detecting device

Patent metadata

Field	Value
Publication number	US-9478690-B2
Application number	US-201514922946-A
Country	US
Kind code	B2
Filing date	Oct 26, 2015
Priority date	Sep 25, 2013
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

First claim

What is claimed is:

1. A photo-detecting device, comprising:
a first nitride layer;
a light absorption layer disposed on the first nitride layer; and
a Schottky junction layer disposed on the light absorption layer,
wherein, according to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and
wherein the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

2. The photo-detecting device of claim 1 , further comprising:
a low-current blocking layer interposed between the light absorption layer and the first nitride layer, the low-current blocking layer comprising a multilayer structure.

3. The photo-detecting device of claim 2 , wherein:
the multilayer structure comprises at least one of binary, ternary, and quaternary nitride layers comprising (Al, In, Ga)N; and
the multilayer structure comprises at least two alternately stacked nitride layers having different composition ratios.

4. The photo-detecting device of claim 1 , wherein the second peak light intensity is 50% or less than that of the first peak light intensity.

5. The photo-detecting device of claim 1 , wherein light applied to the photo-detecting device for the PL properties measurement comprises a neodymium-doped yttrium aluminum garnet (Nd:YAG) pulsed laser beam.

6. The photo-detecting device of claim 1 , wherein the first nitride layer has a greater thickness than the light absorption layer.

7. The photo-detecting device of claim 1 , wherein the first nitride layer comprises gallium nitride (GaN) and the light absorption layer comprises aluminum gallium nitride (AlGaN).

8. The photo-detecting device of claim 1 , wherein the light absorption layer comprises a thickness in a range of 0.1 μm to 0.5 μm.

9. A photo-detecting device, comprising:
a first nitride layer;
a light absorption layer disposed on the first nitride layer; and
a Schottky junction layer disposed on the light absorption layer,
wherein:
the light absorption layer is configured to emit light having a first peak light intensity;
the first nitride layer is configured to emit light having a second peak light intensity; and
the first peak light intensity is greater than the second peak light intensity.

10. The photo-detecting device of claim 9 , further comprising a low-current blocking layer interposed between the light absorption layer and the first nitride layer, the low-current blocking layer comprising a multilayer structure.

11. The photo-detecting device of claim 10 , wherein the second peak light intensity is 50% or less than that of the first peak light intensity.

12. The photo-detecting device of claim 9 , wherein:
the first and second peak light intensities are configured to be determined by a photoluminescence (PL) properties measurement of the photo-detecting device; and
light is configured to be applied to the photo-detecting device for the PL properties measurement using a neodymium-doped yttrium aluminum garnet (Nd:YAG) pulsed laser beam.

13. The photo-detecting device of claim 9 , wherein the first nitride layer has a greater thickness than the light absorption layer.

14. The photo-detecting device of claim 9 , wherein the first nitride layer comprises gallium nitride (GaN) and the light absorption layer comprises aluminum gallium nitride (AlGaN).

15. The photo-detecting device of claim 9 , wherein the light absorption layer comprises a thickness in a range of 0.1 μm to 0.5 μm.

16. The photo-detecting device of claim 10 wherein:
the multilayer structure comprises at least one of binary, ternary, and quaternary nitride layers comprising (Al, In, Ga)N; and
the multilayer structure comprises at least two alternately stacked nitride layers having different composition ratios.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Park Ki Yon
• Kim Hwa Mok
• Lee Kyu Ho
• Lee Sung Hyun
• Kim Hyung Kyu

Classifications

• H10F77/12485

  comprising nitride compounds, e.g. InGaN · CPC title

• H10F77/1246

  III-V nitrides, e.g. GaN · CPC title

• H10F77/496

  Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45) · CPC title

• H10F71/1278

  comprising nitrides, e.g. GaN · CPC title

• H10F71/1274

  comprising nitrides, e.g. InGaN or InGaAlN · CPC title