Radiation detector UBM electrode structure body, radiation detector, and method of manufacturing same
US-9823362-B2 · Nov 21, 2017 · US
of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10F39/022 |
| Official title | {of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe} |
| Display label | of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe |
| Total patents | 172 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 26 |
| 2017 | 27 |
| 2018 | 17 |
| 2019 | 15 |
| 2020 | 16 |
| 2021 | 17 |
| 2022 | 15 |
| 2023 | 12 |
| 2024 | 14 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Substrate with conductive film
US-2017330913-A1 · Nov 16, 2017 · US
Metal oxide interface passivation for photon counting devices
US-2017323922-A1 · Nov 9, 2017 · US
Solid-state imaging device and infrared-absorbing composition
US-2017317131-A1 · Nov 2, 2017 · US
Photodetection device with overdoped interdiode network and manufacturing method
US-2017309663-A1 · Oct 26, 2017 · US
Image sensors including those providing global electronic shutter
US-2017263686-A1 · Sep 14, 2017 · US
Imaging element and imaging device
US-9761628-B2 · Sep 12, 2017 · US
Radiation detector manufactured by dicing a semiconductor wafer and dicing method therefor
US-9755098-B2 · Sep 5, 2017 · US
Photoelectric conversion element and imaging device
US-9754980-B2 · Sep 5, 2017 · US
Wafer-level back-end fabrication systems and methods
US-2017207271-A1 · Jul 20, 2017 · US
Radiation detector with diffusion stop layer
US-9691808-B2 · Jun 27, 2017 · US
Semiconductor device for wafer-scale integration
US-2017179183-A1 · Jun 22, 2017 · US
Radiation detector ubm electrode structure body, radiation detector, and method of manufacturing same
US-2017108594-A1 · Apr 20, 2017 · US
Photoelectric conversion device and image pick-up device
US-9628739-B2 · Apr 18, 2017 · US
Manufacture of a cdhgte multispectral photodiode array by cadmium diffusion
US-2017104026-A1 · Apr 13, 2017 · US
Method of wafer-scale integration of semiconductor devices and semiconductor device
US-9608035-B2 · Mar 28, 2017 · US
Image sensor and method for manufacturing same
US-9608028-B2 · Mar 28, 2017 · US
Imaging device, method for operating the same, module, and electronic device
US-2017069673-A1 · Mar 9, 2017 · US
Imaging device, operating method thereof, and electronic device
US-2017054930-A1 · Feb 23, 2017 · US
Tiled hybrid array and method of forming
US-9570428-B1 · Feb 14, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10F39/022?
- CPC H10F39/022 is the Cooperative Patent Classification code for “of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe.”
- How many patents are filed under CPC H10F39/022 (of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe)?
- Our database includes 172 publications tagged with this CPC code.
- Is patent activity under CPC H10F39/022 growing?
- Publication counts under this code: 14 in 2024 vs 3 in 2025 (latest complete years).