Radiation detector UBM electrode structure body, radiation detector, and method of manufacturing same

Patent metadata

Field	Value
Publication number	US-9823362-B2
Application number	US-201615391207-A
Country	US
Kind code	B2
Filing date	Dec 27, 2016
Priority date	Jul 3, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

First claim

The invention claimed is:

1. A radiation detector UBM electrode structure body including a substrate made of CdTe or CdZnTe, comprising:
a Pt or Au electrode layer formed on the substrate by electroless plating;
a Ni layer formed on the Pt or Au electrode layer by sputtering, a thickness of the Ni layer being 0.2 μm or more and 0.6 μm or less; and
a Pd layer and an Au layer sequentially formed on the Ni layer by sputtering, a thickness of the Pd layer being 0.03 μm or more and 0.1 μm or less.

2. The radiation detector UBM electrode structure body according to claim 1 , further comprising an insulating film arranged on side surfaces of the Pt or Au electrode layer and an UBM layer including the Ni layer, the Pd layer, and the Au layer, part of an upper surface of the UBM layer, and a surface of the substrate on which the Pt or Au electrode layer is arranged.

3. A radiation detector comprising:
a radiation detection element including the radiation detector UBM electrode structure body according to claim 1 and a metal electrode layer disposed on the substrate so as to face the Pt or Au electrode layer formed by electroless plating; and
a detection circuit connected to the Au layer of the radiation detection element via a bump.

4. A method of manufacturing a radiation detector, comprising:
forming a radiation detection element by cutting the radiation detector UBM electrode structure body according to claim 1 ; and
connecting a detection circuit to the Au layer of the radiation detection element via a bump.

5. A method of manufacturing a radiation detector UBM electrode structure body, comprising:
preparing a substrate made of CdTe or CdZnTe;
forming a metal electrode on a first surface of the substrate and forming a Pt or Au electrode layer on a second surface of the substrate by electroless plating so as to face the metal electrode;
forming a Ni layer having a thickness of 0.2 μm or more and 0.6 μm or less on the Pt or Au electrode layer by sputtering;
forming a Pd layer having a thickness of 0.03 μm or more and 0.1 μm or less on the Ni layer by sputtering; and
forming an Au layer on the Pd layer by sputtering.

6. The method of manufacturing the radiation detector UBM electrode structure body according to claim 5 , further comprising forming an insulating film arranged on side surfaces of the Pt or Au electrode layer and a UBM layer including the Ni layer, the Pd layer, and the Au layer, part of an upper surface of the UBM layer, and a surface of the substrate on which the Pt or Au electrode layer is arranged.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Murakami Masaomi
• Mikami Makoto
• Murakami Kouji
• Noda Akira
• Imori Toru

Classifications

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W72/01935

  by plating, e.g. electroless plating or electroplating · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/90

  Bond pads, in general · CPC title