Semiconductor device and manufacturing method thereof
US-2026075865-A1 · Mar 12, 2026 · US
wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS] · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D86/03 |
| Official title | wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS] |
| Display label | wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS] |
| Total patents | 56 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 5 |
| 2017 | 5 |
| 2018 | 7 |
| 2019 | 10 |
| 2020 | 6 |
| 2021 | 4 |
| 2022 | 4 |
| 2023 | 4 |
| 2024 | 3 |
| 2025 | 2 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor devices with reduced effect of capacitive coupling
US-2025364399-A1 · Nov 27, 2025 · US
Semiconductor device and manufacturing method thereof
US-12205945-B2 · Jan 21, 2025 · US
Symmetric FET for RF nonlinearity improvement
US-12113057-B2 · Oct 8, 2024 · US
Semiconductor device and manufacturing method thereof
US-2024096878-A1 · Mar 21, 2024 · US
Semiconductor device and manufacturing method thereof
US-11869887-B2 · Jan 9, 2024 · US
Semiconductor devices with reduced effect of capacitive coupling
US-2023386997-A1 · Nov 30, 2023 · US
Substrate and light-emitting element
US-11773508-B2 · Oct 3, 2023 · US
Semiconductor device and fabrication method therefor
US-11715639-B2 · Aug 1, 2023 · US
DC-coupled high-voltage level shifter
US-11658654-B2 · May 23, 2023 · US
Semiconductor device and manufacturing method thereof
US-2022375928-A1 · Nov 24, 2022 · US
Nitride semiconductor device
US-2022302262-A1 · Sep 22, 2022 · US
Nitride semiconductor device
US-11393905-B2 · Jul 19, 2022 · US
Composite substrate and method of manufacturing composite substrate
US-11245377-B2 · Feb 8, 2022 · US
Symmetric FET for RF Nonlinearity Improvement
US-2021335773-A1 · Oct 28, 2021 · US
Dc-coupled high-voltage level shifter
US-2021328584-A1 · Oct 21, 2021 · US
Symmetric FET for RF nonlinearity improvement
US-10978436-B2 · Apr 13, 2021 · US
DC-coupled high-voltage level shifter
US-10979042-B2 · Apr 13, 2021 · US
Nitride semiconductor device
US-2020365694-A1 · Nov 19, 2020 · US
Wafer level integration including design/co-design, structure process, equipment stress management, and thermal management
US-10811305-B2 · Oct 20, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D86/03?
- CPC H10D86/03 is the Cooperative Patent Classification code for “wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS].”
- How many patents are filed under CPC H10D86/03 (wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS])?
- Our database includes 56 publications tagged with this CPC code.
- Is patent activity under CPC H10D86/03 growing?
- Publication counts under this code: 3 in 2024 vs 2 in 2025 (latest complete years).