Planar and non-planar fet-based electrostatic discharge protection devices
US-2024347531-A1 · Oct 17, 2024 · US
Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/409 |
| Official title | {Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors} |
| Display label | Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors |
| Total patents | 68 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 7 |
| 2017 | 6 |
| 2018 | 13 |
| 2019 | 5 |
| 2020 | 5 |
| 2021 | 8 |
| 2022 | 1 |
| 2023 | 2 |
| 2024 | 8 |
| 2025 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Wide bandgap semiconductor device with sensor element
US-12074079-B2 · Aug 27, 2024 · US
Planar and non-planar FET-based electrostatic discharge protection devices
US-12051691-B2 · Jul 30, 2024 · US
Power semiconductor device
US-2024243123-A1 · Jul 18, 2024 · US
Semiconductor device configured for gate dielectric monitoring
US-12032014-B2 · Jul 9, 2024 · US
Lateral surge protection devices
US-11887981-B2 · Jan 30, 2024 · US
Power device including lateral insulated gate bipolar transistor (LIGBT) and manufacturing method thereof
US-11876093-B2 · Jan 16, 2024 · US
Semiconductor device including substrate layer with floating base region and gate driver circuit
US-2023261040-A1 · Aug 17, 2023 · US
Field-effect transistor structure including passive device and back side power distribution network (bspdn)
US-2023163202-A1 · May 25, 2023 · US
Integrated circuit with P-N-P junction and vertically aligned field effect transistor, and method to form same
US-11482521-B2 · Oct 25, 2022 · US
Semiconductor device and method of manufacturing semiconductor device
US-2021398812-A1 · Dec 23, 2021 · US
Conductivity modulated drain extended MOSFET
US-11139292-B2 · Oct 5, 2021 · US
Power device including lateral insulated gate bipolar transistor (ligbt) and manufacturing method thereof
US-2021305242-A1 · Sep 30, 2021 · US
Integrated circuit with p-n-p junction and vertically aligned field effect transistor, and method to form same
US-2021249406-A1 · Aug 12, 2021 · US
Wide bandgap semiconductor device with sensor element
US-2021202341-A1 · Jul 1, 2021 · US
Lateral surge protection devices
US-2021118870-A1 · Apr 22, 2021 · US
Semiconductor device configured for gate dielectric monitoring
US-2021072304-A1 · Mar 11, 2021 · US
Integrated silicon controlled rectifier (SCR) and a low leakage SCR supply clamp for electrostatic discharge (ESP) protection
US-10944257-B2 · Mar 9, 2021 · US
Planar and non-planar fet-based electrostatic discharge protection devices
US-2020411506-A1 · Dec 31, 2020 · US
Planar and non-planar FET-based electrostatic discharge protection devices
US-10777546-B2 · Sep 15, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/409?
- CPC H10D84/409 is the Cooperative Patent Classification code for “Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors.”
- How many patents are filed under CPC H10D84/409 (Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors)?
- Our database includes 68 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/409 growing?
- Publication counts under this code: 8 in 2024 vs 7 in 2025 (latest complete years).