Air gap spacer formation for nano-scale semiconductor devices
US-2024079266-A1 · Mar 7, 2024 · US
comprising air gaps
comprising air gaps · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D64/679 |
| Official title | {comprising air gaps} |
| Display label | comprising air gaps |
| Total patents | 1,261 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 21 |
| 2016 | 30 |
| 2017 | 59 |
| 2018 | 121 |
| 2019 | 142 |
| 2020 | 156 |
| 2021 | 157 |
| 2022 | 147 |
| 2023 | 143 |
| 2024 | 131 |
| 2025 | 139 |
| 2026 | 15 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Nanosheet MOSFET with full-height air-gap spacer
US-9853132-B2 · Dec 26, 2017 · US
Device for improving performance through gate cut last process
US-2017365676-A1 · Dec 21, 2017 · US
Air gap spacer for metal gates
US-2017352657-A1 · Dec 7, 2017 · US
Air-gap top spacer and self-aligned metal gate for vertical fets
US-2017330951-A1 · Nov 16, 2017 · US
Semiconductor memory device and method of manufacturing the same
US-2017271356-A1 · Sep 21, 2017 · US
Memory device and method for fabricating the same
US-2017200722-A1 · Jul 13, 2017 · US
Airgap formation between source/drain contacts and gates
US-9666533-B1 · May 30, 2017 · US
Vertical transistor with air-gap spacer
US-2017148897-A1 · May 25, 2017 · US
Air gap spacer integration for improved fin device performance
US-9515156-B2 · Dec 6, 2016 · US
Semiconductor device with air gap and method for fabricating the same
US-9515022-B2 · Dec 6, 2016 · US
FET with air gap spacer for improved overlap capacitance
US-9508810-B1 · Nov 29, 2016 · US
Nanosheet MOSFET with full-height air-gap spacer
US-9508829-B1 · Nov 29, 2016 · US
Non-planar exciton transistor (BiSFET) and methods for making
US-9484428-B2 · Nov 1, 2016 · US
Semiconductor structure having source/drain gouging immunity
US-2016293715-A1 · Oct 6, 2016 · US
Semiconductor device with air gap and method for fabricating the same
US-2016276273-A1 · Sep 22, 2016 · US
Semiconductor device
US-2016276450-A1 · Sep 22, 2016 · US
Method for forming air gap structure using carbon-containing spacer
US-9443956-B2 · Sep 13, 2016 · US
Vertical transistor with air gap spacers
US-9443982-B1 · Sep 13, 2016 · US
Semiconductor device with low-K spacers
US-9425280-B2 · Aug 23, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D64/679?
- CPC H10D64/679 is the Cooperative Patent Classification code for “comprising air gaps.”
- How many patents are filed under CPC H10D64/679 (comprising air gaps)?
- Our database includes 1,261 publications tagged with this CPC code.
- Is patent activity under CPC H10D64/679 growing?
- Publication counts under this code: 131 in 2024 vs 139 in 2025 (latest complete years).