Bidirectional thyristor device
US-12513928-B2 · Dec 30, 2025 · US
Gate electrodes for thyristors
Gate electrodes for thyristors · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D64/291 |
| Official title | {Gate electrodes for thyristors} |
| Display label | Gate electrodes for thyristors |
| Total patents | 52 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 2 |
| 2017 | 5 |
| 2018 | 7 |
| 2019 | 5 |
| 2020 | 5 |
| 2021 | 3 |
| 2022 | 5 |
| 2023 | 5 |
| 2024 | 3 |
| 2025 | 8 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Module comprising a switchable bypass device
US-12513975-B2 · Dec 30, 2025 · US
Bidirectional thyristor device with asymmetric characteristics
US-12495565-B2 · Dec 9, 2025 · US
Power semiconductor device
US-12464749-B2 · Nov 4, 2025 · US
Reverse conducting power semiconductor device and method for manufacturing the same
US-12426349-B2 · Sep 23, 2025 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2025261452-A1 · Aug 14, 2025 · US
Turn-off power semiconductor device with gate runners
US-12342559-B2 · Jun 24, 2025 · US
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures
US-12328947-B2 · Jun 10, 2025 · US
Segmented power diode structure with improved reverse recovery
US-11967638-B2 · Apr 23, 2024 · US
Bidirectional thyristor device
US-2024038880-A1 · Feb 1, 2024 · US
Bidirectional thyristor device with asymmetric characteristics
US-2024014302-A1 · Jan 11, 2024 · US
Module comprising a switchable bypass device
US-2023411503-A1 · Dec 21, 2023 · US
Power semiconductor device
US-2023317818-A1 · Oct 5, 2023 · US
Semiconductor memory device and method for fabricating thereof
US-11711918-B2 · Jul 25, 2023 · US
Turn-Off Power Semiconductor Device with Gate Runners
US-2023136897-A1 · May 4, 2023 · US
Reverse Conducting Power Semiconductor Device and Method for Manufacturing the Same
US-2023046742-A1 · Feb 16, 2023 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2022415881-A1 · Dec 29, 2022 · US
Silicon controlled rectifier with a gate electrode for electrostatic discharge protection
US-11398565-B2 · Jul 26, 2022 · US
Vertical thyristor
US-11362204-B2 · Jun 14, 2022 · US
Segmented Power Diode Structure with Improved Reverse Recovery
US-2022181473-A1 · Jun 9, 2022 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D64/291?
- CPC H10D64/291 is the Cooperative Patent Classification code for “Gate electrodes for thyristors.”
- How many patents are filed under CPC H10D64/291 (Gate electrodes for thyristors)?
- Our database includes 52 publications tagged with this CPC code.
- Is patent activity under CPC H10D64/291 growing?
- Publication counts under this code: 3 in 2024 vs 8 in 2025 (latest complete years).