Reverse conducting power semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12426349-B2
Application number	US-202117797218-A
Country	US
Kind code	B2
Filing date	Feb 3, 2021
Priority date	Feb 3, 2020
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segments, each of which is stripe-shaped and arranged within a corresponding stripe-shaped first diode anode layer segment such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments.

First claim

The invention claimed is:

1. A reverse conducting power semiconductor device comprising:
a semiconductor wafer having a first main side and a second main side opposite to the first main side;
a plurality of local lifetime control regions comprising radiation induced recombination centers;
a plurality of thyristor cells, each cell comprising a drift layer and a base layer; and
a freewheeling diode comprising:
a diode anode layer of a second conductivity type at the first main side, wherein a p-n junction is formed by the diode anode layer and the drift layer and wherein the diode anode layer is separated from the base layer by the drift layer;
a diode anode electrode disposed at the first main side and electrically connected to the diode anode layer;
a diode cathode layer of a first conductivity type opposite the second conductivity type disposed at the second main side and electrically connected to the drift layer; and
a diode cathode electrode on the second main side, the diode cathode electrode forming an ohmic contact with the diode cathode layer;

wherein the diode anode layer comprises a plurality of first diode anode layer segments that are stripe-shaped in an orthogonal projection onto a plane parallel to the second main side, a longitudinal main axis of each first diode anode layer segment extending in a lateral direction away from a lateral center of the semiconductor wafer, wherein lateral relates to a direction parallel to the second main side,
wherein each first diode anode layer segment has a first lateral width in a direction perpendicular to its longitudinal main axis;
wherein each local lifetime control region is arranged within a corresponding one of the first diode anode layer segments in the orthogonal projection such that a longitudinal main axis of each local lifetime control region extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments;
wherein each local lifetime control region has a second lateral width which is at least 200 μm less than the first lateral width of the corresponding one of the first diode anode layer segments;
wherein the diode cathode layer comprises a plurality of diode cathode layer segments;
wherein each diode cathode layer segment is stripe-shaped and arranged within a corresponding one of the stripe-shaped first diode anode layer segments in the orthogonal projection such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments; and
wherein each diode cathode layer segment has a third lateral width which is at least 200 μm less than the second lateral width of a corresponding one of the local lifetime control regions.

2. The device according to claim 1 , wherein each of the plurality of thyristor cells comprises in an order from the first main side to the second main side:
a thyristor cathode layer of the first conductivity type;
the base layer of the second conductivity type, wherein a first p-n junction is formed between the base layer and the thyristor cathode layer;
the drift layer of the first conductivity type, wherein a second p-n junction is formed between the base layer and the drift layer; and
a thyristor anode layer of the second conductivity type separated from the base layer by the drift layer,
a gate electrode arranged lateral to the thyristor cathode layer and forming an ohmic contact with the base layer;
a thyristor cathode electrode arranged on the first main side and forming an ohmic contact with the thyristor cathode layer; and
a thyristor anode electrode arranged on the second main side and forming an ohmic contact with the thyristor anode layer.

3. The device according to claim 2 , wherein the semiconductor wafer has a circular shape and the longitudinal main axis of each first diode anode layer segment extends along a radial direction of the circular shape.

4. The device according to claim 2 , wherein the first lateral width of each first diode anode layer segment is at any position along the longitudinal main axis less than 5000 μm.

5. The device according to claim 2 , wherein the freewheeling diode has a circular-shaped portion arranged in the lateral center of the semiconductor wafer in the orthogonal projection onto the plane parallel to the second main side, and wherein each first diode anode layer segment laterally extends from the circular-shaped portion.

6. The device according to claim 2 , wherein a length of each first diode anode layer segment in a direction along its longitudinal main axis is at least 20% of a width of the semiconductor wafer in this direction.

7. The device according to claim 2 , wherein the diode anode layer comprises stripe-shaped second diode anode layer segments that extend along radial directions and that are arranged laterally between two adjacent first diode anode layer segments, respectively, a distance between each second diode anode layer segment and the lateral center of the semiconductor wafer being larger than a distance between each first diode anode layer segment and the lateral center of the semiconductor wafer.

8. The device according to claim 2 , wherein a minimum of the first lateral width of each first diode anode layer segment is less than 2000 μm.

9. The device according to claim 2 , wherein the third lateral width is at least 600 μm less than the first lateral width of the corresponding one of the first diode anode layer segments.

10. The device according to claim 2 , wherein a depth of each base layer and a depth of the diode anode layer are the same.

11. The device according to claim 2 , wherein the gate electrodes of the plurality of thyristor cells are electrically connected with each other and wherein the device further comprises a common gate contact for contacting the gate electrodes of the plurality of thyristor cells, the common gate contact being arranged on a circumferential edge of the semiconductor wafer on the first main side.

12. The device according to claim 2 , wherein the thyristor cathode layer comprises a plurality of separate strip-shaped thyristor cathode layer segments that are at least partially surrounded in a plane parallel to the first main side by a gate metallization layer forming the gate electrodes and connections there between.

13. The device according to claim 12 , wherein the thyristor cathode layer segments of the plurality of thyristor cells are arranged at the first main side as stripes placed in concentric rings around the lateral center of the semiconductor wafer, a longitudinal main axis of each stripe extending along a radial direction which is a direction extending from the lateral center of the semiconductor wafer and parallel to the first main side.

14. The device according to claim 2 , wherein the thyristor cathode electrodes are adjacent to and extend parallel to the stripe-shaped diode anode segments.

15. A reverse conducting power semiconductor device comprising:
a semiconductor wafer having a first main side and a second main side opposite to the first main side;
a plurality of thyristor cells;
a freewheeling diode; and
a plurality of local lifetime control regions including radiation induced recombination centers;
wherein each of the plurality of thyristor cells comprises, in an order from the first main side to the second main side:
a thyristor cathode layer of a first conductivity type;
a base layer of a second conductivity type different from the first conductivity type, wherein a first p-n junction is formed between the base layer and the thyristor cathode

Assignees

• Hitachi Energy Ltd

Inventors

• Wikstroem Tobias
• Vemulapati Umamaheswara

Classifications

• H10D84/0102

  of thyristors having built-in components, e.g. thyristor having built-in diode · CPC title

• H10D62/129

  Cathode regions of diodes · CPC title

• H10D8/411

  PN diodes having planar bodies · CPC title

• H10D64/291

  Gate electrodes for thyristors · CPC title

• H10D62/53

  the imperfections being within the semiconductor body · CPC title