Bilayer metal dichalcogenides, syntheses thereof, and uses thereof
US-2022406923-A1 · Dec 22, 2022 · US
Transition metal dichalcogenides, e.g. MoSe2
Transition metal dichalcogenides, e.g. MoSe2 · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/883 |
| Official title | {Transition metal dichalcogenides, e.g. MoSe2} |
| Display label | Transition metal dichalcogenides, e.g. MoSe2 |
| Total patents | 214 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 9 |
| 2017 | 1 |
| 2018 | 4 |
| 2019 | 9 |
| 2020 | 12 |
| 2021 | 16 |
| 2022 | 17 |
| 2023 | 13 |
| 2024 | 24 |
| 2025 | 93 |
| 2026 | 12 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Integrated Circuits and Methods for Forming Thin Film Crystal Layers
US-2022148917-A1 · May 12, 2022 · US
Method of forming a 2-dimensional channel material using ion implantation
US-2022108886-A1 · Apr 7, 2022 · US
Integrated circuits and methods for forming thin film crystal layers
US-11276644-B2 · Mar 15, 2022 · US
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US-11244825-B2 · Feb 8, 2022 · US
Transition metal dichalcogenide (tmd) layer stack for transistor applications and methods of fabrication
US-2021408375-A1 · Dec 30, 2021 · US
Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices
US-2021305378-A1 · Sep 30, 2021 · US
Source/drain contact with 2-D material
US-11121214-B2 · Sep 14, 2021 · US
Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same
US-2021280685-A1 · Sep 9, 2021 · US
Doped metal-chalcogenide thin film and method of manufacturing the same
US-11094558-B2 · Aug 17, 2021 · US
Electronic device based on two-dimensional semiconductor and method for manufacturing electronic device
US-11088032-B2 · Aug 10, 2021 · US
Gate-controlled diode and chip
US-2021226046-A1 · Jul 22, 2021 · US
Semiconductor device and method of manufacturing semiconductor device
US-2021202265-A1 · Jul 1, 2021 · US
Semiconductor device and manufacturing method thereof
US-2021193801-A1 · Jun 24, 2021 · US
Electronic device using two dimensional semiconductor material
US-11024759-B2 · Jun 1, 2021 · US
Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same
US-11018001-B2 · May 25, 2021 · US
Semiconductor device having a lateral semiconductor heterojunction and method
US-10998452-B2 · May 4, 2021 · US
Semiconductor device having a lateral semiconductor heterojunction and method
US-2021119060-A1 · Apr 22, 2021 · US
Method and apparatus for forming a patterned layer of material
US-2021079519-A1 · Mar 18, 2021 · US
Semiconductor device and manufacturing method thereof
US-2021057524-A1 · Feb 25, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/883?
- CPC H10D62/883 is the Cooperative Patent Classification code for “Transition metal dichalcogenides, e.g. MoSe2.”
- How many patents are filed under CPC H10D62/883 (Transition metal dichalcogenides, e.g. MoSe2)?
- Our database includes 214 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/883 growing?
- Publication counts under this code: 24 in 2024 vs 93 in 2025 (latest complete years).