Ballistic field-effect transistors based on bloch resonance and methods of operating a transistor
US-2020127130-A1 · Apr 23, 2020 · US
Electronic device using two dimensional semiconductor material
US11024759B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11024759-B2 |
| Application number | US-201816226950-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2018 |
| Priority date | Dec 14, 2018 |
| Publication date | Jun 1, 2021 |
| Grant date | Jun 1, 2021 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.
First claim
Opening claim text (preview).
The invention claimed is: 1. An electronic device comprising: a two-dimensional semiconductor material layer; and a heterogeneous material layer disposed on top of and in contact with the two-dimensional semiconductor material layer, wherein the heterogeneous material layer is a silicon substrate doped with an impurity of a type different from the two-dimensional semiconductor material layer, and wherein the two-dimensional semiconductor material layer is a MoS 2 layer. 2. The electronic device according to claim 1 , wherein a thickness of a depletion layer of a PN junction between the two-dimensional semiconductor material layer and the silicon substrate is controlled by a thickness of the two-dimensional semiconductor material layer. 3. The electronic device according to claim 2 , wherein the electronic device is a photodiode. 4. An electronic device comprising: a two-dimensional semiconductor material layer; and a heterogeneous material layer disposed on top of and in plane contact with the two-dimensional semiconductor material layer, wherein the heterogeneous material layer has a band gap different from the two-dimensional semiconductor material layer, and wherein the two-dimensional semiconductor material layer is a MoS 2 layer, and the heterogeneous material layer comprises GaS. 5. The electronic device according to claim 4 , wherein the electronic device is a transistor and a two-dimensional electron gas (2DEG) is formed in the transistor due to a band gap difference between the two-dimensional semiconductor material layer and the heterogeneous material layer. 6. The electronic device according to claim 5 , wherein the heterogeneous material layer is adjacent to a gate electrode of the transistor. 7. The electronic device according to claim 5 , wherein the heterogeneous material layer is a crystalline layer and has insulating property of interrupting leakage current when an electric field is applied to a gate electrode of the transistor.
Assignees
Inventors
Classifications
PN junction isolations · CPC title
characterised by the materials · CPC title
having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title
the devices having potential barriers, e.g. phototransistors · CPC title
the potential barrier being a PN heterojunction · CPC title
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Frequently asked questions
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- What does patent US11024759B2 cover?
- Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.
- Who is the assignee on this patent?
- Korea Advanced Inst Sci & Tech
- What technology area does this patent fall under?
- Primary CPC classification H10F10/16. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 01 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).