Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor
US-10488364-B2 · Nov 26, 2019 · US
of FETs having Schottky gates
of FETs having Schottky gates · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/161 |
| Official title | {of FETs having Schottky gates} |
| Display label | of FETs having Schottky gates |
| Total patents | 140 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 10 |
| 2017 | 14 |
| 2018 | 18 |
| 2019 | 22 |
| 2020 | 19 |
| 2021 | 8 |
| 2022 | 5 |
| 2023 | 9 |
| 2024 | 15 |
| 2025 | 10 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor devices with regrown contacts and methods of fabrication
US-10403718-B2 · Sep 3, 2019 · US
Power MOSFETs with superior high frequency figure-of-merit
US-10355132-B2 · Jul 16, 2019 · US
Semiconductor devices with regrown contacts and methods of fabrication
US-2019206994-A1 · Jul 4, 2019 · US
Semiconductor device
US-2019198652-A1 · Jun 27, 2019 · US
Process of forming nitride semiconductor device
US-2019165130-A1 · May 30, 2019 · US
Passivation Structure For GaN Field Effect Transistor
US-2019148498-A1 · May 16, 2019 · US
Semiconductor devices with raised doped crystalline structures
US-2019148533-A1 · May 16, 2019 · US
Field effect transistor and process of forming the same
US-2019097034-A1 · Mar 28, 2019 · US
Semiconductor devices with raised doped crystalline structures
US-10211327-B2 · Feb 19, 2019 · US
Semiconductor device including metal-semiconductor junction
US-10199469-B2 · Feb 5, 2019 · US
Low voltage (power) junction fet with all-around junction gate
US-2019035787-A1 · Jan 31, 2019 · US
InGaAlP schottky field effect transistor with stepped bandgap ohmic contact
US-10186620-B1 · Jan 22, 2019 · US
Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
US-2019006472-A1 · Jan 3, 2019 · US
Semiconductor device
US-10153362-B2 · Dec 11, 2018 · US
High power semiconductor device
US-10121886-B2 · Nov 6, 2018 · US
THERMALLY STABLE AMMONIA GAS SENSOR USING ZnO-FUNCTIONALIZED AIGaN/GaN HETEROSTRUCTURE TRANSISTOR
US-2018313785-A1 · Nov 1, 2018 · US
Field effect transistor (FET) structure with integrated gate connected diodes
US-10103137-B2 · Oct 16, 2018 · US
Power MOSFETs with Superior High Frequency Figure-of-Merit and Methods of Forming Same
US-2018269322-A1 · Sep 20, 2018 · US
Low voltage (power) junction FET with all-around junction gate
US-10056379-B1 · Aug 21, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/161?
- CPC H10D62/161 is the Cooperative Patent Classification code for “of FETs having Schottky gates.”
- How many patents are filed under CPC H10D62/161 (of FETs having Schottky gates)?
- Our database includes 140 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/161 growing?
- Publication counts under this code: 15 in 2024 vs 10 in 2025 (latest complete years).