Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor

Patent metadata

Field	Value
Publication number	US-10488364-B2
Application number	US-201815963713-A
Country	US
Kind code	B2
Filing date	Apr 26, 2018
Priority date	Apr 28, 2017
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).

First claim

What is claimed is:

1. A sensor for detecting at least one of ammonia and N x O y , the sensor comprising: a transistor having a gate, a drain, and a source,
wherein the gate comprises a layer of ammonia-detecting material attached functionally to a substrate of the transistor,
wherein the ammonia detecting material comprises zinc oxide (ZnO) attached to the transistor, thereby effectively functionalizing the transistor, and at least a portion of a surface of the ZnO is exposed to an external environment to detect ammonia.

2. The sensor according to claim 1 , wherein the ammonia detecting material comprises films or nanostructure type metal oxides including one or more of TiO 2 , ITO, ZnO, WO 3 and AZO.

3. The sensor according to claim 1 , wherein the transistor is a high electron mobility transistor (HEMT).

4. The sensor according to claim 3 , wherein the HEMT includes a first layer of gallium nitride (GaN).

5. The sensor according to claim 4 , wherein the HEMT includes a second layer of aluminum gallium nitride (AlGaN) on the first layer.

6. The sensor according to claim 1 , further comprising a passivation layer between the transistor and the ammonia detecting material.

7. The sensor of according to claim 1 , wherein the ammonia detecting material is a layer of zinc oxide (ZnO) nanorods between the source and drain of the transistor.

8. A gas sensor, comprising:
a gallium nitride (GaN) layer;
an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer;
a source and a drain disposed on the AlGaN layer; and
an ammonia adsorbing layer directly disposed on the AlGaN layer and placed between
the source and the drain,
wherein the ammonia adsorbing layer comprises zinc oxide (ZnO) and wherein at least a portion of a surface of the ZnO is exposed to an external environment to detect ammonia.

9. The gas sensor according to claim 8 , wherein the ammonia adsorbing layer further comprises at least one of titanium dioxide (TiO 2 ), indium tin oxide (ITO), tungsten trioxide (WO 3 ), and aluminum-doped zinc oxide (AZO).

10. The gas sensor according to claim 8 , further comprising a spacer placed between the source and the ammonia adsorbing layer and between the drain and the ammonia adsorbing layer.

11. The gas sensor according to claim 10 , wherein the spacer comprises a silicon nitride layer.

12. The gas sensor according to claim 10 , wherein the source and the drain comprises a metal layer including at least one of titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), and the metal layer forms an ohmic contact with the AlGaN layer.

13. The gas sensor according to claim 12 , further comprising a contact pad disposed on the source and the drain.

14. The gas sensor according to claim 13 , wherein the spacer is in contact with side surfaces of the source and the drain, and in contact with top surfaces of the source and the drain.

15. The gas sensor according to claim 13 , wherein the GaN layer is a c-plane GaN layer.

16. The gas sensor according to claim 13 , further comprising a two-dimensional electron gas (2DEG) channel between the GaN layer and the AlGaN layer.

17. The gas sensor according to claim 16 , further comprising a Sapphire substrate disposed below the GaN layer.

18. A gas sensor, comprising:
a substrate;
a gallium nitride (GaN) layer disposed on the substrate;
an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer;
a source and a drain disposed on the AlGaN layer;
zinc oxide (ZnO) nanorods directly disposed on the AlGaN layer and placed between the source and the drain;
a silicon nitride spacer placed between the source and the ZnO nanorods and between the drain and the ZnO nanorods; and
a contact pad disposed on the source and the drain,
wherein the source and the drain comprise a metal layer that forms an ohmic contact with the AlGaN layer,
wherein at least a portion of a surface of the ZnO nanorods is exposed to an external environment to detect ammonia.

Assignees

• Univ Florida

Inventors

• Jang Soohwan
• Ren Fan
• Pearton Stephen J

Classifications

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• G01N33/0037

  NOx · CPC title

• G01N27/4146 Primary

  involving nanosized elements, e.g. nanotubes, nanowires · CPC title

• G01N27/4141

  specially adapted for gases · CPC title

• G01N33/0054

  Ammonia · CPC title