Semiconductor device including metal-semiconductor junction

Patent metadata

Field	Value
Publication number	US-10199469-B2
Application number	US-201715439031-A
Country	US
Kind code	B2
Filing date	Feb 22, 2017
Priority date	Aug 9, 2016
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A semiconductor device includes a silicon semiconductor layer including at least one region doped with a first conductive type dopant, a metal material layer electrically connected to the doped region, and a self-assembled monolayer (SAM) between the doped region and the metal material layer, the SAM forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a Schottky barrier height (SBH).

First claim

What is claimed is:

1. A semiconductor device comprising:
a silicon semiconductor layer including at least one region doped with a first conductive type dopant;
at least one metal material layer electrically connected to the doped region; and
at least one self-assembled monolayer (SAM) between the doped region and the metal material layer, the SAM forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a Schottky barrier height (SBH), the SAM being formed by a self-assembled monolayer material having a structure as represented below,

wherein,
each R1 includes one of OCH 3 , OC 2 H 5 , and Cl,
R2 is a terminal group,
X is one of a benzene ring and (CH 2 )n, and
n is equal to or greater than 1.

2. The semiconductor device of claim 1 , wherein the SAM forms a positive molecular dipole or a negative molecular dipole on the interface of the silicon semiconductor layer.

3. The semiconductor device of claim 2 , wherein
the at least one region doped is doped with an n-type dopant, and
the SAM forms the positive molecular dipole on a side of the interface of the silicon semiconductor layer.

4. The semiconductor device of claim 2 , wherein
the at least one region doped is doped with a p-type dopant, and
the SAM forms the negative molecular dipole on a side of the interface of the silicon semiconductor layer.

5. The semiconductor device of claim 1 , wherein the terminal group for R2 is a —CF 3 group.

6. The semiconductor device of claim 1 , wherein
n is equal to or greater than 12.

7. The semiconductor device of claim 1 , wherein
the at least one region doped is doped with an n-type dopant, and
the terminal group for R2 includes one of trifluoro, nitrile, sulfo, nitro, ammonium, carbonyl, ester, carboxamido, fluoro, chloro, and bromo.

8. The semiconductor device of claim 1 , wherein
the at least one region doped is doped with a p-type dopant, and
the terminal group R2 includes one of primary amine, tertiary amine, hydroxyl, alkoxy, sulfhydryl, carboxamido, carboxyl, alkyl, phenyl, and alkenyl.

9. The semiconductor device of claim 1 , wherein the SAM has a thickness of about 0.1 nm or greater and about 1 nm or less.

10. The semiconductor device of claim 1 , wherein the at least one metal material layer includes at least one of Mg, Al, Sc, Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, La, Hf, Ta, W, Ir, Pt, Au, Bi, and an alloy thereof.

11. A semiconductor device comprising:
a silicon semiconductor layer including source and drain regions doped with a first conductive type dopant;
a metal material layer electrically connected to the source and drain regions, the metal material layer including a source electrode and a drain electrode; and
first and second self-assembled monolayers (SAMs) between the respective source and drain regions and the respective source and drain electrodes, the first and second SAMs forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing an Schottky barrier height (SBH)
the first and second SAMs being formed by a self-assembled monolayer material having a structure as represented below,

wherein,
each R1 includes one of OCH 3 , OC 2 H 5 , and Cl,
R2 is a terminal group,
X is one of a benzene ring and (CH 2 )n, and
n is equal to or greater than 1.

12. The semiconductor device of claim 11 , wherein the first and second SAMs form a positive molecular dipole or a negative molecular dipole on the interface of the silicon semiconductor layer.

13. The semiconductor device of claim 12 , wherein
the source and drain regions are doped with an n-type dopant, and
the first and second SAMs are on a side of the interface of the silicon semiconductor layer.

14. The semiconductor device of claim 12 , wherein
the source and drain regions are doped with a p-type dopant, and
the first and second SAMs are on a side of the interface of the silicon semiconductor layer.

15. The semiconductor device of claim 11 , wherein the terminal group for R2 is a —CF 3 group.

16. The semiconductor device of claim 11 , wherein
n is equal to or greater than 12.

17. The semiconductor device of claim 16 , wherein
the source and drain regions are doped with an n-type dopant, and
the terminal group R2 includes one of trifluoro, nitrile, sulfo, nitro, ammonium, carbonyl, ester, carboxamido, fluoro, chloro, and bromo.

18. The semiconductor device of claim 16 , wherein
the source and drain regions are doped with a p-type dopant, and
the terminal group for R2 includes one of primary amine, tertiary amine, hydroxyl, alkoxy, sulfhydryl, carboxamido, carboxyl, alkyl, phenyl, and alkenyl.

19. The semiconductor device of claim 11 , wherein the first and second SAMs have a thickness of about 0.1 nm or greater and about 1 nm or less.

20. The semiconductor device of claim 11 , wherein the metal material layer includes at least one of Mg, Al, Sc, Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, La, Hf, Ta, W, Ir, Pt, Au, Bi, and an alloy thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Nam Seunggeol
• Shin Hyeonjin
• Cho Yeonchoo
• Lee Minhyun
• Kim Changhyun
• Park Seongjun

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H01L29/41725

  Electricity · mapped topic

• H01L29/78

  Electricity · mapped topic

• H01L29/66568

  Electricity · mapped topic