Electrostatic discharge protection circuit
US-2021366896-A1 · Nov 25, 2021 · US
FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)
FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/80 |
| Official title | FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) |
| Display label | FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) |
| Total patents | 76 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 16 |
| 2016 | 7 |
| 2017 | 10 |
| 2018 | 8 |
| 2019 | 10 |
| 2020 | 5 |
| 2021 | 7 |
| 2022 | 2 |
| 2023 | 1 |
| 2024 | 5 |
| 2025 | 4 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Wide bandgap semiconductor device
US-11075295-B2 · Jul 27, 2021 · US
Embedded JFETs for high voltage applications
US-11069805-B2 · Jul 20, 2021 · US
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
US-2021202473-A1 · Jul 1, 2021 · US
Electrostatic discharge protection circuit
US-2020343239-A1 · Oct 29, 2020 · US
Transistor having asymmetric threshold voltage, buck converter and method of forming semiconductor device
US-10784781-B2 · Sep 22, 2020 · US
Quantum dot array devices
US-10644113-B2 · May 5, 2020 · US
Embedded JFETs for High Voltage Applications
US-2020111909-A1 · Apr 9, 2020 · US
Wide bandgap semiconductor device
US-2020020793-A1 · Jan 16, 2020 · US
Embedded JFETs for high voltage applications
US-10510882-B2 · Dec 17, 2019 · US
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
US-2019371792-A1 · Dec 5, 2019 · US
Silicon Carbide Semiconductor Component
US-2019355815-A1 · Nov 21, 2019 · US
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
US-2019312027-A1 · Oct 10, 2019 · US
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
US-10431580-B1 · Oct 1, 2019 · US
Quantum dot array devices
US-2019229188-A1 · Jul 25, 2019 · US
Transistor having asymmetric threshold voltage, buck converter and method of forming semiconductor device
US-2019165678-A1 · May 30, 2019 · US
Semiconductor device and method for manufacturing the same
US-10249749-B2 · Apr 2, 2019 · US
Techniques for forming non-planar germanium quantum well devices
US-10236369-B2 · Mar 19, 2019 · US
Threshold voltage defined switches for programmable camouflage gates
US-10177768-B2 · Jan 8, 2019 · US
Semiconductor device and method for manufacturing the same
US-2018350963-A1 · Dec 6, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/80?
- CPC H10D30/80 is the Cooperative Patent Classification code for “FETs having rectifying junction gate electrodes (H10D30/40 takes precedence).”
- How many patents are filed under CPC H10D30/80 (FETs having rectifying junction gate electrodes (H10D30/40 takes precedence))?
- Our database includes 76 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/80 growing?
- Publication counts under this code: 5 in 2024 vs 4 in 2025 (latest complete years).