Magnetic domain wall logic devices and interconnect
US-9847475-B2 · Dec 19, 2017 · US
using galvano-magnetic devices, e.g. Hall-effect devices
using galvano-magnetic devices, e.g. Hall-effect devices · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H03K19/18 |
| Official title | using galvano-magnetic devices, e.g. Hall-effect devices |
| Display label | using galvano-magnetic devices, e.g. Hall-effect devices |
| Total patents | 233 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 14 |
| 2016 | 19 |
| 2017 | 30 |
| 2018 | 18 |
| 2019 | 28 |
| 2020 | 24 |
| 2021 | 26 |
| 2022 | 18 |
| 2023 | 18 |
| 2024 | 20 |
| 2025 | 16 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Spin transistor memory
US-9842635-B2 · Dec 12, 2017 · US
Magneto-electric devices and interconnect
US-2017352802-A1 · Dec 7, 2017 · US
Beta tungsten thin films with giant spin Hall effect for use in compositions and structures with perpendicular magnetic anisotropy
US-2017338021-A1 · Nov 23, 2017 · US
Transistor that employs collective magnetic effects thereby providing improved energy efficiency
US-9825218-B2 · Nov 21, 2017 · US
Ratioed logic with a high impedance load
US-2017317680-A1 · Nov 2, 2017 · US
Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure
US-9806710-B2 · Oct 31, 2017 · US
Spin torque majority gate device
US-2017302280-A1 · Oct 19, 2017 · US
Magnetic sensor and method of manufacturing the same
US-2017294577-A1 · Oct 12, 2017 · US
Spin transport electronic device
US-2017294572-A1 · Oct 12, 2017 · US
Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure
US-2017288666-A1 · Oct 5, 2017 · US
Logical operation circuit and memory device
US-9773539-B2 · Sep 26, 2017 · US
Semiconductor device
US-2017264298-A1 · Sep 14, 2017 · US
Spin-orbit logic with charge interconnects and magnetoelectric nodes
US-2017243917-A1 · Aug 24, 2017 · US
Magnetic sensor having a recessed die pad
US-9741924-B2 · Aug 22, 2017 · US
Method for computing with complementary networks of magnetic tunnel junctions
US-9711200-B2 · Jul 18, 2017 · US
Configurable exclusive-OR / exclusive-NOR gate using magneto-electric tunnel junctions
US-9692413-B2 · Jun 27, 2017 · US
Spin torque majority gate device
US-2017179373-A1 · Jun 22, 2017 · US
Non-volatile ferroelectric logic with granular power-grating
US-2017178711-A1 · Jun 22, 2017 · US
Transistor that employs collective magnetic effects thereby providing improved energy efficiency
US-2017104151-A1 · Apr 13, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H03K19/18?
- CPC H03K19/18 is the Cooperative Patent Classification code for “using galvano-magnetic devices, e.g. Hall-effect devices.”
- How many patents are filed under CPC H03K19/18 (using galvano-magnetic devices, e.g. Hall-effect devices)?
- Our database includes 233 publications tagged with this CPC code.
- Is patent activity under CPC H03K19/18 growing?
- Publication counts under this code: 20 in 2024 vs 16 in 2025 (latest complete years).