Active matrix using hybrid integrated circuit and bipolar transistor
US-9472607-B2 · Oct 18, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/808 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 392 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 43 |
| 2016 | 38 |
| 2017 | 43 |
| 2018 | 42 |
| 2019 | 43 |
| 2020 | 39 |
| 2021 | 32 |
| 2022 | 40 |
| 2023 | 36 |
| 2024 | 34 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
US-9450050-B2 · Sep 20, 2016 · US
Apparatus and methods for modulating current / voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures
US-9425187-B1 · Aug 23, 2016 · US
Apparatus and Methods for Modulating Current / Voltage Response Using Multiple Semi-Conductive Channel Regions (SCR) Produced from Different Integrated Semiconductor Structures
US-2016240526-A1 · Aug 18, 2016 · US
Semiconductor device and method of manufacturing the same
US-9412823-B2 · Aug 9, 2016 · US
Method of Triggering Avalanche Breakdown in a Semiconductor Device
US-2016225932-A1 · Aug 4, 2016 · US
Power circuit, control method, power system, and package structure of power circuit
US-9401356-B2 · Jul 26, 2016 · US
Semiconductor device
US-2016155726-A1 · Jun 2, 2016 · US
Method of Manufacturing a Device by Locally Heating One or More Metalization Layers and by Means of Selective Etching
US-2016155861-A1 · Jun 2, 2016 · US
Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
US-2016150169-A1 · May 26, 2016 · US
Embedded JFETs for High Voltage Applications
US-2016141418-A1 · May 19, 2016 · US
Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures
US-9343589-B2 · May 17, 2016 · US
Systems and method for ohmic contacts in silicon carbide devices
US-2016118258-A1 · Apr 28, 2016 · US
Semiconductor device
US-9299857-B2 · Mar 29, 2016 · US
Bootstrap MOS for High Voltage Applications
US-2016056303-A1 · Feb 25, 2016 · US
Embedded JFETs for high voltage applications
US-9257979-B2 · Feb 9, 2016 · US
Junction field effect transistor with an epitaxially grown gate structure
US-9240497-B2 · Jan 19, 2016 · US
Forming jfet and ldmos transistor in monolithic power integrated circuit using deep diffusion regions
US-2015380398-A1 · Dec 31, 2015 · US
Semiconductor Device
US-2015372152-A1 · Dec 24, 2015 · US
Junction field effect transistor
US-2015357481-A1 · Dec 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/808?
- CPC H01L29/808 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/808 (Electricity)?
- Our database includes 392 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/808 growing?
- Publication counts under this code: 34 in 2024 vs 2 in 2025 (latest complete years).