Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9412823-B2
Application number	US-201514855669-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Mar 22, 2013
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element D in the combination(s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination(s) being not lower than 1×10 18 cm −3 and not higher than 1×10 22 cm −3 , an SiC layer formed on the first face, a first electrode formed on the first face side, and a second electrode formed on the second face.

First claim

What is claimed is:

1. A semiconductor device comprising:
a p-type SiC substrate having a first face and a second face, the p-type SiC substrate containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being at least one of a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and a combination of B (boron) and P (phosphorus), a ratio of a concentration of the element D to a concentration of the element A forming at least one of the combinations being higher than 0.33 but lower than 0.995, the concentration of the element A forming at least one of the combinations being not lower than 1×10 18 cm −3 and not higher than 1×10 22 cm −3 ;
an SiC layer formed on the first face;
a first electrode formed on a first face side; and
a second electrode formed on the second face.

2. The device according to claim 1 , wherein the ratio of the concentration of the element D to the concentration of the element A is higher than 0.40 but lower than 0.95.

3. The device according to claim 1 , wherein the concentration of the element A is 1×10 19 cm −3 or higher.

4. The device according to claim 1 , wherein an acceptor level of the element A is 150 meV or less.

5. The device according to claim 1 , wherein 90% or more of the element D is in a lattice site location nearest to the element A.

Assignees

• Toshiba Kk

Inventors

• Ota Chiharu
• Shimizu Tatsuo
• Nishio Johji
• Shinohe Takashi

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3408 Primary

  Silicon carbide · CPC title