Multilayer Structure for Reducing Film Roughness in Magnetic Devices
US-2025338775-A1 · Oct 30, 2025 · US
with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F41/303 |
| Official title | {with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation} |
| Display label | with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation |
| Total patents | 50 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 13 |
| 2016 | 5 |
| 2017 | 2 |
| 2018 | 5 |
| 2019 | 8 |
| 2020 | 4 |
| 2021 | 3 |
| 2022 | 4 |
| 2023 | 1 |
| 2024 | 1 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Multilayer structure for reducing film roughness in magnetic devices
US-12356865-B2 · Jul 8, 2025 · US
Magnetoresistive sensor and manufacturing method thereof
US-12256644-B2 · Mar 18, 2025 · US
System and method for skyrmion based logic device
US-12211641-B1 · Jan 28, 2025 · US
Magnetoresistive stack/structure and methods therefor
US-12137616-B2 · Nov 5, 2024 · US
Magnetoresistive sensor and manufacturing method thereof
US-2023176149-A1 · Jun 8, 2023 · US
Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is used
US-11374168-B2 · Jun 28, 2022 · US
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets
US-2022199310-A1 · Jun 23, 2022 · US
Semiconductor device and method of making the same
US-11348715-B2 · May 31, 2022 · US
Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US-11264560-B2 · Mar 1, 2022 · US
Magnetic memory devices and methods of fabrication
US-11063088-B2 · Jul 13, 2021 · US
Magnetic memory devices and methods of fabrication
US-2021175284-A1 · Jun 10, 2021 · US
Magneto-ionic device with a solid state proton pump and methods for using the same
US-10991874-B2 · Apr 27, 2021 · US
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using an Oxidation Control Layer and Magnetic Moment Tuning Layer for Spintronic Applications
US-2020403143-A1 · Dec 24, 2020 · US
Semiconductor device and method of making the same
US-2020388425-A1 · Dec 10, 2020 · US
Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is used
US-2020357985-A1 · Nov 12, 2020 · US
Magnetoresistive stack/structure and methods therefor
US-10811597-B2 · Oct 20, 2020 · US
Magnetoresistive stack/structure and methods therefor
US-2019355897-A1 · Nov 21, 2019 · US
PSTTM device with bottom electrode interface material
US-10340445-B2 · Jul 2, 2019 · US
Magneto-ionic device with a solid state proton pump and methods for using the same
US-2019172998-A1 · Jun 6, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F41/303?
- CPC H01F41/303 is the Cooperative Patent Classification code for “with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation.”
- How many patents are filed under CPC H01F41/303 (with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation)?
- Our database includes 50 publications tagged with this CPC code.
- Is patent activity under CPC H01F41/303 growing?
- Publication counts under this code: 1 in 2024 vs 4 in 2025 (latest complete years).