Magnetoresistive stack/structure and methods therefor

Patent metadata

Field	Value
Publication number	US-12137616-B2
Application number	US-201816190299-A
Country	US
Kind code	B2
Filing date	Nov 14, 2018
Priority date	Nov 17, 2017
Publication date	Nov 5, 2024
Grant date	Nov 5, 2024

Abstract

A method of fabricating a magnetoresistive device includes forming a magnetically fixed region on one side of an intermediate region. Forming the magnetically fixed region may include forming a first ferromagnetic region and forming an antiferromagnetic coupling region on one side of the first ferromagnetic region. The method may also include treating a surface of the coupling region by exposing the surface to a gas, and forming a second ferromagnetic region on the treated surface of the coupling region.

First claim

What is claimed is:

1. A method of fabricating a magnetoresistive device, comprising:
forming an intermediate region;
forming a magnetically free region on one side of the intermediate region; and
forming a magnetically fixed region on an opposite side of the intermediate region, wherein forming the magnetically fixed region includes:
forming a first ferromagnetic region;
forming an antiferromagnetic coupling region on one side of the first ferromagnetic region;
upon forming the antiferromagnetic coupling region, treating a surface of the antiferromagnetic coupling region by:
exposing the surface to a mixture of about 2-80% oxygen in other gases; and
providing a dusting of palladium on the surface exposed to the mixture; and

forming a second ferromagnetic region on the treated surface of the antiferromagnetic coupling region,
wherein treating the surface of the antiferromagnetic coupling region includes exposing the surface to the mixture in a vacuum chamber at a pressure less than or equal to 0.05 millitorr, and wherein the method further comprises removing water vapor from the vacuum chamber prior to the step of treating the surface of the antiferromagnetic coupling region.

2. The method of claim 1 , wherein the surface is exposed to the mixture of about 2-80% oxygen in other gases at a pressure between 0.03 millitorr and 0.05 millitorr.

3. The method of claim 1 , wherein the surface is exposed to the mixture of about 2-80% oxygen in other gases for a time period less than or equal to about 60 seconds.

4. The method of claim 1 , wherein the surface is exposed to the mixture of about 2-80% oxygen in other gases for a time period less than or equal to about 10 seconds.

5. The method of claim 1 , wherein the surface is exposed to the mixture of about 2-80% oxygen in other gases for a time period less than or equal to about 10 seconds at a temperature less than about 35° C.

6. The method of claim 1 , wherein the other gases include nitrogen.

7. The method of claim 1 , wherein the method further comprises reducing a base pressure within the vacuum chamber using a vacuum pump having a cold trap prior to the step of treating the surface of the antiferromagnetic coupling region.

8. A method of fabricating a magnetoresistive device, comprising:
forming an intermediate region;
forming a magnetically free region on one side of the intermediate region; and
forming a magnetically fixed region on an opposite side of the intermediate region, wherein forming the magnetically fixed region includes:
forming a first ferromagnetic region;
forming an antiferromagnetic coupling region on one side of the first ferromagnetic region;
upon forming the antiferromagnetic coupling region, treating a surface of the antiferromagnetic coupling region by:
exposing the surface of the antiferromagnetic coupling region to a mixture of about 2-80% oxygen in other gases, including nitrogen, at a pressure less than or equal to 1 millitorr for a time period less than or equal to about 10 seconds at a temperature less than about 35° C.; and
providing a dusting of palladium on the surface exposed to the mixture, wherein the dusting of palladium on the surface forms an interfacial layer that is less than 1 Å thick; and

forming a second ferromagnetic region on the exposed surface of the antiferromagnetic coupling region,
wherein exposing the surface of the antiferromagnetic coupling region includes exposing the surface to the mixture in a vacuum chamber, and wherein the method further comprises removing water vapor from the vacuum chamber prior to the step of exposing the surface.

9. The method of claim 8 , wherein the surface of the antiferromagnetic coupling region is exposed to the mixture of about 2-80% oxygen in other gases at a pressure less than or equal to 0.05 millitorr.

10. The method of claim 8 , wherein the method further comprises decreasing a base pressure within the vacuum chamber using a vacuum pump having a cold trap prior to the step of exposing the surface.

11. The method of claim 1 , wherein an interfacial layer is formed upon treating the surface of the antiferromagnetic coupling region, the interfacial layer including a reaction product of the mixture, the dusting, and one or more constituents of at least one of the first ferromagnetic region or the second ferromagnetic region.

12. The method of claim 1 , wherein an interfacial layer is formed as a result of the dusting, the interfacial layer being a discontinuous layer of material on the antiferromagnetic coupling region.

13. The method of claim 8 , wherein the interfacial layer is formed upon treating the surface of the antiferromagnetic coupling region, the interfacial layer including a reaction product of the mixture, the dusting, and one or more constituents of at least one of the first ferromagnetic region or the second ferromagnetic region.

14. A method of fabricating a magnetoresistive device, comprising:
forming an intermediate region;
forming a magnetically free region on one side of the intermediate region; and
forming a magnetically fixed region on an opposite side of the intermediate region, wherein forming the magnetically fixed region includes:
forming a first ferromagnetic region;
forming an antiferromagnetic coupling region on one side of the first ferromagnetic region;
upon forming the antiferromagnetic coupling region, treating a surface of the antiferromagnetic coupling region by:
exposing the surface of the antiferromagnetic coupling region to a mixture of about 2-80% oxygen in other gases, including nitrogen, at a pressure less than or equal to 1 millitorr for a time period less than or equal to about 10 seconds at a temperature less than about 35° C.; and
providing a dusting of palladium on the surface exposed to the mixture, wherein the dusting of palladium on the surface forms an interfacial layer that is less than 1 Å thick; and

forming a second ferromagnetic region on the exposed surface of the antiferromagnetic coupling region,
wherein exposing the surface of the antiferromagnetic coupling region includes exposing the surface to the mixture in a vacuum chamber.

15. The method of claim 14 , wherein the method further comprises:
removing water vapor from the vacuum chamber prior to the step of exposing the surface; and
decreasing a base pressure within the vacuum chamber using a vacuum pump having a cold trap prior to the step of exposing the surface.

16. The method of claim 14 , wherein the surface of the antiferromagnetic coupling region is exposed to the mixture of about 2-80% oxygen in other gases at a pressure less than or equal to 0.05 millitorr.

17. The method of claim 14 , wherein the surface is exposed to the mixture of about 2-80% oxygen in other gases at a pressure between 0.03 millitorr and 0.05 millitorr.

18. The method of claim 14 , further comprising:
forming a seed region at an interface between the magnetically fixed region and an electrode.

19. The method of claim 18 , wherein the seed region includes a multi-layer structure, and wherein the seed region includes one or more of nickel, chromium, cobalt, iron, ruthenium, platinum, tantalum, or alloys thereof.

20. The method of claim 14 , wherein the method further comprises reducing a base pressure within the vacuum chamber using a vacuum pump having a cold trap prior to the step of treating the surface of the antiferromagnetic coupling region.

Assignees

• Everspin Technologies Inc

Inventors

• Sun Jijun

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title

• G11C11/16 Primary

  using elements in which the storage effect is based on magnetic spin effect · CPC title