Magnetoresistive element and magnetic memory
US-10103321-B2 · Oct 16, 2018 · US
Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F10/3295 |
| Official title | {Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers} |
| Display label | Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers |
| Total patents | 117 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 32 |
| 2016 | 13 |
| 2017 | 12 |
| 2018 | 4 |
| 2019 | 12 |
| 2020 | 11 |
| 2021 | 12 |
| 2022 | 9 |
| 2023 | 5 |
| 2024 | 4 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Magnetoresistive effect device
US-2018277749-A1 · Sep 27, 2018 · US
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
US-2018175287-A1 · Jun 21, 2018 · US
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
US-9842988-B2 · Dec 12, 2017 · US
Magnetic sensor
US-9823315-B2 · Nov 21, 2017 · US
Magnetic memory element and memory device
US-9818464-B2 · Nov 14, 2017 · US
Laminated structures for power efficient on-chip magnetic inductors
US-2017294504-A1 · Oct 12, 2017 · US
Magnetic diffusion barriers and filter in psttm mtj construction
US-2017271576-A1 · Sep 21, 2017 · US
Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
US-9761254-B2 · Sep 12, 2017 · US
Laminated structures for power efficient on-chip magnetic inductors
US-9761368-B2 · Sep 12, 2017 · US
Memory device
US-9722173-B2 · Aug 1, 2017 · US
Laminated structures for power efficient on-chip magnetic inductors
US-2017178788-A1 · Jun 22, 2017 · US
Side Shielded Magnetoresistive (MR) Read Head with Perpendicular Magnetic Free Layer
US-2017077391-A1 · Mar 16, 2017 · US
CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
US-9558765-B2 · Jan 31, 2017 · US
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
US-2017025602-A1 · Jan 26, 2017 · US
Magnetoresistive element and magnetic memory
US-2016380185-A1 · Dec 29, 2016 · US
Magnetic memory element and memory device
US-2016379698-A1 · Dec 29, 2016 · US
Memory device
US-2016365509-A1 · Dec 15, 2016 · US
Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
US-9520147-B2 · Dec 13, 2016 · US
Magnetic read head with MR enhancements
US-9515253-B2 · Dec 6, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F10/3295?
- CPC H01F10/3295 is the Cooperative Patent Classification code for “Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers.”
- How many patents are filed under CPC H01F10/3295 (Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers)?
- Our database includes 117 publications tagged with this CPC code.
- Is patent activity under CPC H01F10/3295 growing?
- Publication counts under this code: 4 in 2024 vs 3 in 2025 (latest complete years).