Laminated structures for power efficient on-chip magnetic inductors

Patent metadata

Field	Value
Publication number	US-9761368-B2
Application number	US-201514978353-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Dec 22, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.

First claim

What is claimed is:

1. A method of making a laminated magnetic structure comprising:
depositing, over a supporting substrate, a first sequence of layers comprising, in order, a barrier layer or an adhesion layer, a first antiferromagnetic layer, a first magnetic growth layer, and a first soft magnetic layer;
depositing an insulating non-magnetic spacer located between the first sequence of layers and a second sequence of layers;
depositing the second sequence of layers comprising, in order, a second soft magnetic layer, a second magnetic growth layer, and a second antiferromagnetic layer; and
pinning the first and second soft magnetic layers with, respectively, the first and second antiferromagnetic layers by subjecting the layers to annealing in a magnetic field;
wherein the first soft magnetic layer is directly deposited on a surface of the first magnetic growth layer, and wherein the second magnetic growth layer is directly deposited on a surface of the second soft magnetic layer.

2. The method of claim 1 , wherein the second antiferromagnetic layer is directly deposited on a surface of the second magnetic growth layer.

3. The method of claim 1 , wherein the first and second antiferromagnetic layers are independently formed by depositing an alloy of manganese, an alloy comprising platinum and manganese, an alloy comprising iron and manganese, and an alloy comprising nickel and manganese.

4. The method of claim 1 , wherein the first and second soft magnetic layers are formed by depositing a material comprising an element selected from the group consisting of CoFeB, CoWB, CoWP, CoP, CoMoP, CoMoB, NiFe, NiFeCo, and NiFeCo, and combinations thereof.

5. The method of claim 1 , wherein the layers are deposited by sputtering.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Gallagher William J
• O'Sullivan Eugene J
• Wang Naigang

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H01F2027/2809

  on stacked layers · CPC title

• H01F27/2804 Primary

  Printed windings · CPC title