Magnetoresistive element and magnetic memory

Patent metadata

Field	Value
Publication number	US-2016380185-A1
Application number	US-201615259525-A
Country	US
Kind code	A1
Filing date	Sep 8, 2016
Priority date	Mar 13, 2014
Publication date	Dec 29, 2016
Grant date	—

Abstract

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn 2 VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

First claim

1 . A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn 2 VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

2 . The element according to claim 1 , wherein the third magnetic layer further contains at least one of Co, Fe, Cu, Rh, or Ru.

3 . The element according to claim 1 , wherein the third magnetic layer has a thickness of 1.5 nm to 5 nm.

4 . The element according to claim 1 , wherein the first magnetic layer contains Mn, Ga, and at least one of Al, Ge, Cr, Co, Pt, Ir, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.

5 . The element according to claim 1 , further comprising a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one of Mg, Ba, Ca, Sr, Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er, B, C, or N.

6 . A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Ru 2 FeGe or Rh 2 CoZ, where Z represents at least one element of Sn or Sb.

7 . The element according to claim 6 , wherein the third magnetic layer has a thickness of 1.5 nm to 5 nm.

8 . The element according to claim 6 , wherein the first magnetic layer contains Mn, Ga, and at least one of Al, Ge, Cr, Co, Pt, Ir, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.

9 . The element according to claim 6 , further comprising a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one of Mg, Ba, Ca, Sr, Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er, B, C, or N.

10 . A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Co 2 YZ and at least one of Cu, Rh, Ru, Ti, V, or Nb, where Y represents at least one element of Fe or Mn, and Z represents at least one element of Al, Si, Ga, Ge, or Sn.

11 . The element according to claim 10 , wherein the third magnetic layer has a thickness of 1.5 nm to 5 nm.

12 . The element according to claim 10 , wherein the first magnetic layer contains Mn, Ga, and at least one of Al, Ge, Cr, Co, Pt, Ir, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.

13 . The element according to claim 10 , further comprising a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one of Mg, Ba, Ca, Sr, Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er, B, C, or N.

14 . A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing XMnSb, where X represents at least one element of Ni or Co.

15 . The element according to claim 14 , wherein the third magnetic layer has a thickness of 1.5 nm to 5 nm.

16 . The element according to claim 14 , wherein the first magnetic layer containing Mn, Ga, and at least one of Al, Ge, Cr, Co, Pt, Ir, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.

17 . The element according to claim 14 , further comprising a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one of Mg, Ba, Ca, Sr, Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er, B, C, or N.

18 . A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn 2 YZ, where Y represents at least one element of Ru, Cr, or Co, and Z represents at least one element of Al, Ga, or Ge.

19 . The element according to claim 18 , wherein the third magnetic layer has a thickness of 1.5 nm to 5 nm.

20 . The element according to claim 18 , wherein the first magnetic layer contains Mn, Ga, and at least one of Al, Ge, Cr, Co, Pt, Ir, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.

21 . The element according to claim 18 , further comprising a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one of Mg, Ba, Ca, Sr, Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er, B, C, or N.

22 . A magnetic memory comprising:
the magnetoresistive element according to claim 1 ; a first wiring electrically connected to the first magnetic layer of the magnetoresistive element; and a second wiring electrically connected to the second magnetic layer of the magnetoresistive element.

Assignees

• Toshiba Kk
• Univ Tohoku

Inventors

• Kato Yushi
• Daibou Tadaomi
• Ma Qinli
• Sugihara Atsushi
• Mizukami Shigemi
• Miyazaki Terunobu

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/08 Primary

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic