Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Patent metadata

Field	Value
Publication number	US-9882123-B2
Application number	US-201615333017-A
Country	US
Kind code	B2
Filing date	Oct 24, 2016
Priority date	Dec 21, 2012
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

First claim

What is claimed is:

1. A non-volatile memory device, comprising:
a fixed magnetic layer disposed above a first conductive electrode;
a dielectric layer disposed above the fixed magnetic layer;
a free magnetic layer disposed above the dielectric layer; and
a second conductive electrode disposed directly on the free magnetic layer, wherein oxidized iron atoms are present at an interface of the second conductive electrode and the free magnetic layer, wherein the second conductive electrode comprises a conductive oxide material layer disposed on the free magnetic layer, and wherein the second conductive electrode further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed on the conductive oxide material layer of the second conductive electrode.

2. The non-volatile memory device of claim 1 , wherein the conductive oxide material layer has a thickness of approximately 1 nanometer.

3. The non-volatile memory device of claim 1 , wherein the conductive oxide material layer comprises a material selected from the group consisting of an oxide of tantalum, In 2 O 3-x , VO 2 , V 2 O 3 , WO 2 , Sn-doped In 2 O 3 (ITO), In- or Ga-doped ZnO, and RuO.

4. The non-volatile memory device of claim 1 , wherein the free magnetic layer comprises cobalt, iron and boron.

5. The non-volatile memory device of claim 1 , wherein the free magnetic layer is disposed on the dielectric layer, and wherein oxidized iron atoms are present at an interface of the free magnetic layer and the dielectric layer.

6. The non-volatile memory device of claim 1 , wherein the interface of the second conductive electrode and the free magnetic layer provides a perpendicular magnetic component for the non-volatile memory device.

7. The non-volatile memory device of claim 1 , further comprising:
a transistor electrically connected to the first conductive electrode or the second conductive electrode.

8. A non-volatile memory device, comprising:
a fixed magnetic layer disposed above a first conductive electrode;
a dielectric layer disposed above the fixed magnetic layer;
a free magnetic layer disposed above the dielectric layer; and
a second conductive electrode disposed directly on the free magnetic layer, wherein oxidized cobalt atoms are present at an interface of the second conductive electrode and the free magnetic layer, wherein the second conductive electrode comprises a conductive oxide material layer disposed on the free magnetic layer, and wherein the second conductive electrode further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed on the conductive oxide material layer of the second conductive electrode.

9. The non-volatile memory device of claim 8 , wherein the conductive oxide material layer has a thickness of approximately 1 nanometer.

10. The non-volatile memory device of claim 8 , wherein the conductive oxide material layer comprises a material selected from the group consisting of an oxide of tantalum, In 2 O 3-x , VO 2 , V 2 O 3 , WO 2 , Sn-doped In 2 O 3 (ITO), In- or Ga-doped ZnO, and RuO.

11. The non-volatile memory device of claim 8 , wherein the free magnetic layer comprises cobalt, iron and boron.

12. The non-volatile memory device of claim 8 , wherein the free magnetic layer is disposed on the dielectric layer, and wherein oxidized cobalt atoms are present at an interface of the free magnetic layer and the dielectric layer.

13. The non-volatile memory device of claim 8 , wherein the interface of the second conductive electrode and the free magnetic layer provides a perpendicular magnetic component for the non-volatile memory device.

14. The non-volatile memory device of claim 8 , further comprising:
a transistor electrically connected to the first conductive electrode or the second conductive electrode.

Assignees

• Intel Corp

Inventors

• Doyle Brian S
• Kuo Charles C
• Oguz Kaan
• Shah Uday
• Karpov Elijah V
• Mojarad Roksana Golizadeh
• Doczy Mark L
• Chau Robert S

Classifications

• G11C11/18

  using Hall-effect devices · CPC title

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• H01F10/3236

  made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence) · CPC title