Magnetoresistance effect element and magnetic memory

Patent metadata

Field	Value
Publication number	US-10164174-B2
Application number	US-201815872922-A
Country	US
Kind code	B2
Filing date	Jan 16, 2018
Priority date	Jul 16, 2015
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (K i ) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.

First claim

What is claimed is:

1. A magnetoresistance effect element, comprising:
a first magnetic layer having a magnetization direction perpendicular to a surface of the first magnetic layer, the first magnetic layer containing at least one 3d ferromagnetic transition metal element;
a first non-magnetic layer adjacent to the first magnetic layer, a perpendicular magnetic anisotropy with an interfacial magnetic anisotropy energy density (K i ) existing at an interface between the first magnetic layer and the first non-magnetic layer, said perpendicular magnetic anisotropy causing the first magnetic layer to have the magnetization direction perpendicular to the in-plane direction; and
a second magnetic layer disposed adjacent to the first magnetic layer on a side opposite to the first non-magnetic layer, the second magnetic layer having a magnetization direction parallel to the magnetization direction of the first magnetic layer, the second magnetic layer containing at least one 3d ferromagnetic transition metal element, and having a saturation magnetization (Ms) lower than a saturation magnetization (Ms) of the first magnetic layer, an interfacial magnetic anisotropy energy density (K i ) at the interface between the first magnetic layer and the first non-magnetic layer being greater than an interfacial magnetic anisotropy energy density (K i ) at an interface between one layer, a material of which is the same as a material of the first non-magnetic layer, and another layer, a material of which is the same as a material of the second magnetic layer.

2. The magnetoresistance effect element according to claim 1 , wherein the second magnetic layer has a thickness greater than that of the first magnetic layer.

3. The magnetoresistance effect element according to claim 1 , wherein an atomic fraction of the at least one 3d ferromagnetic transition metal element of the second magnetic layer is smaller than that of the first magnetic layer.

4. The magnetoresistance effect element according to claim 1 , wherein the second magnetic layer has a boron composition greater than that of the first magnetic layer.

5. The magnetoresistance effect element according to claim 1 , wherein
each of the first and second magnetic layers contains a non-magnetic element, and
the second magnetic layer has a non-magnetic element composition greater than that of the first magnetic layer.

6. The magnetoresistance effect element according to claim 5 , wherein the at least one non-magnetic element in each of the first and second magnetic layers includes one of V, Ti, Cr, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B, Pd, or Pt.

7. The magnetoresistance effect element according to claim 1 , further comprising:
a third magnetic layer disposed adjacent to the second magnetic layer on a side opposite to the first magnetic layer, the third magnetic layer having a magnetization direction parallel to the magnetization direction of the first magnetic layer, the third magnetic layer containing at least one 3d ferromagnetic transition metal element; and
a second non-magnetic layer disposed adjacent to the third magnetic layer on a side opposite to the second magnetic layer, wherein
the third magnetic layer increases an interfacial magnetic anisotropy energy density (K i ) at an interface with the second non-magnetic layer.

8. The magnetoresistance effect element according to claim 7 , wherein the second magnetic layer is thicker than each of the first and third magnetic layers.

9. The magnetoresistance effect element according to claim 7 , wherein an atomic fraction of the at least one 3d ferromagnetic transition metal element of the second magnetic layer is smaller than that of each of the first and third magnetic layers.

10. The magnetoresistance effect element according to claim 7 , wherein the second magnetic layer has a boron composition greater than any boron compositions of the first and third magnetic layers.

11. The magnetoresistance effect element according to claim 7 , wherein the first, second and third magnetic layers each contain at least one non-magnetic element, and
the second magnetic layer has a non-magnetic element composition greater than any non-magnetic element compositions of the first and third magnetic layers.

12. The magnetoresistance effect element according to claim 11 , wherein the at least one non-magnetic element in each of the first to third magnetic layers includes one of V, Ti, Cr, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B, Pd, or Pt.

13. The magnetoresistance effect element according to claim 7 , wherein
the second magnetic layer has a multi-layer structure including fourth and fifth magnetic layers and a third non-magnetic layer disposed between the fourth and fifth magnetic layers, and
the fourth and fifth magnetic layers each contain at least one 3d ferromagnetic transition metal element.

14. The magnetoresistance effect element according to claim 13 , wherein a combined thickness of the fourth and fifth magnetic layers is equal to or greater than a combined thickness of the first and third magnetic layers.

15. The magnetoresistance effect element according to claim 13 , wherein an atomic fraction of the at least one 3d ferromagnetic transition metal element of each of the fourth and fifth magnetic layers is smaller than any atomic fraction of the at least one 3d ferromagnetic transition metal element of each of the first and third magnetic layers.

16. The magnetoresistance effect element according to claim 13 , wherein the fourth and fifth magnetic layers each have a boron composition greater than any boron composition of each of the first and third magnetic layers.

17. The magnetoresistance effect element according to claim 13 , wherein
the fourth and fifth magnetic layers each contain at least one non-magnetic element, and
the fourth and fifth magnetic layers each have a non-magnetic element composition greater than any non-magnetic element composition of each of the first and third magnetic layers.

18. The magnetoresistance effect element according to claim 13 , wherein the third non-magnetic layer has a thickness that is no greater than 1 nm.

19. The magnetoresistance effect element according to claim 18 , wherein the at least one non-magnetic element in each of the fourth and fifth magnetic layers includes one of V, Ti, Cr, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B, Pd, or Pt.

20. The magnetoresistance effect element according to claim 13 , wherein
the at least one 3d ferromagnetic transition metal element in each of the fourth and fifth magnetic layers includes one of Co, Fe, Ni, or Mn.

21. The magnetoresistance effect element according to claim 1 , further comprising:
a second non-magnetic layer disposed on one side of the second magnetic layer opposite to another side on which the first magnetic layer is disposed; and
two reference layers, each of which is disposed on either one side of the first non-magnetic layer opposite to another side on which the first magnetic layer is disposed or one side of the second non-magnetic layer opposite to another side on which the second magnetic layer is disposed.

22. The magnetoresistance effect element according to claim 21 , wherein one of the two reference layers is an anti-parallel coupling reference layer.

23. The magnetoresistance effect element according to claim 21 , further comprising
a first recording layer including the first and second magnetic layers,
a third reference layer disposed on one side of the first recording layer op

Assignees

• Univ Tohoku

Inventors

• Sato Hideo
• Ikeda Shoji
• Bersweiler Mathias
• Honjo Hiroaki
• Watanabe Kyota
• Fukami Shunsuke
• Matsukura Fumihiro
• Ito Kenchi
• Niwa Masaaki
• Endoh Tetsuo
• Ohno Hideo

Classifications

• H01F10/32

  Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3236

  made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence) · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title