Integrated circuits with magnetic tunnel junctions and methods for producing the same

Patent metadata

Field	Value
Publication number	US-10032980-B2
Application number	US-201715443799-A
Country	US
Kind code	B2
Filing date	Feb 27, 2017
Priority date	Apr 26, 2016
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

First claim

What is claimed is:

1. An integrated circuit comprising:
a magnetic tunnel junction comprising a fixed layer, a total free structure, and a barrier layer positioned between the fixed layer and the total free structure, wherein the total free structure comprises a first free layer, a second free layer, and a first spacer layer, wherein the first spacer layer is non-magnetic, wherein the first spacer layer is disposed between the first free layer and the second free layer, wherein at least one of the first free layer or the second free layer comprise a primary free layer alloy, wherein the primary free layer alloy comprises an alloy of cobalt, iron, boron, and a free layer additional element, wherein the free layer additional element is present at a concentration of from about 1 atomic percent to about 10 atomic percent, based on a total weight of the primary free layer alloy, and wherein the free layer additional element is selected from one or more of niobium (Nb) and hafnium (Hf).

2. The integrated circuit of claim 1 wherein the free layer additional element is Nb.

3. The integrated circuit of claim 1 wherein the free layer additional element is Hf.

4. The integrated circuit of claim 1 wherein the first spacer layer comprises a non-magnetic material selected from one or more of titanium (Ti), vanadium (V), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (W), and aluminum (Al).

5. The integrated circuit of claim 1 wherein the total free structure comprises a third free layer, wherein the third free layer directly contacts one of the first free layer or the second free layer.

6. The integrated circuit of claim 5 wherein one of the first free layer and the second free layer consists of iron and cobalt.

7. The integrated circuit of claim 5 wherein the first free layer, the second free layer, and the third free layer all have different compositions.

8. The integrated circuit of claim 5 wherein the third free layer comprises about 100 percent of a tertiary free layer alloy, wherein the tertiary free layer alloy is an alloy of cobalt, iron, boron, and the free layer additional element.

9. The integrated circuit of claim 8 wherein the tertiary free layer alloy has a different composition than the primary free layer alloy.

10. The integrated circuit of claim 1 wherein the magnetic tunnel junction further comprises:
a second spacer layer that is non-magnetic, wherein the second spacer layer overlies the second free layer;
a third free layer that is magnetic, wherein the third free layer overlies the second spacer layer.

11. The integrated circuit of claim 1 wherein one of the first free layer or the second free layer consists of an alloy of cobalt, iron, and boron.

12. The integrated circuit of claim 1 wherein one of the first free layer or the second free layer comprises an alloy of iron and cobalt at about 100 atomic percent.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Noh Seungmo
• Yamane Kazutaka
• Lee Kangho

Classifications

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title

• H01F10/3213

  Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices · CPC title

• H01F10/145

  containing Al, e.g. SENDUST · CPC title

• H01L43/12

  Electricity · mapped topic