Test circuit and testing method
US-2025123317-A1 · Apr 17, 2025 · US
for measuring break-down voltage or punch through voltage therefor
for measuring break-down voltage or punch through voltage therefor · Cooperative Patent Classification (CPC)
Computing, optics, measurement, and control technologies.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | G01R31/261 |
| Official title | {for measuring break-down voltage or punch through voltage therefor} |
| Display label | for measuring break-down voltage or punch through voltage therefor |
| Total patents | 36 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 1 |
| 2017 | 3 |
| 2018 | 5 |
| 2019 | 2 |
| 2020 | 3 |
| 2022 | 6 |
| 2023 | 7 |
| 2024 | 3 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Safety container for high power device testing over a range of temperatures
US-12050243-B2 · Jul 30, 2024 · US
Gate detection circuit of insulated gate bipolar transistor
US-12019115-B2 · Jun 25, 2024 · US
Test method
US-11982701-B2 · May 14, 2024 · US
Manufacturing method of semiconductor device, method of testing the semiconductor device and wafer holding member
US-2023411200-A1 · Dec 21, 2023 · US
In situ threshold voltage determination of a semiconductor device
US-11821936-B2 · Nov 21, 2023 · US
Serial IGBT voltage equalization method and system based on auxiliary voltage source
US-11705899-B2 · Jul 18, 2023 · US
In Situ Threshold Voltage Determination Of A Semiconductor Device
US-2023221363-A1 · Jul 13, 2023 · US
Gate detection circuit of insulated gate bipolar transistor
US-2023160945-A1 · May 25, 2023 · US
Test method
US-2023113109-A1 · Apr 13, 2023 · US
Semiconductor test apparatus and semiconductor test method
US-11624767-B2 · Apr 11, 2023 · US
Safety container for high power device testing over a range of temperatures
US-2022381813-A1 · Dec 1, 2022 · US
Semiconductor module and semiconductor-module deterioration detecting method
US-11462445-B2 · Oct 4, 2022 · US
IGBT module reliability evaluation method and device based on bonding wire degradation
US-11378613-B2 · Jul 5, 2022 · US
Semiconductor test apparatus and semiconductor test method
US-2022128616-A1 · Apr 28, 2022 · US
Semiconductor module and semiconductor-module deterioration detecting method
US-2022059419-A1 · Feb 24, 2022 · US
Igbt module reliability evaluation method and device based on bonding wire degradation
US-2022003807-A1 · Jan 6, 2022 · US
Serial igbt voltage equalization method and system based on auxiliary voltage source
US-2020403610-A1 · Dec 24, 2020 · US
Double-pulse test systems and methods
US-10640003-B2 · May 5, 2020 · US
Evaluation apparatus including a plurality of insulating portions surrounding a probe and semiconductor device evaluation method based thereon
US-10539607-B2 · Jan 21, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC G01R31/261?
- CPC G01R31/261 is the Cooperative Patent Classification code for “for measuring break-down voltage or punch through voltage therefor.”
- How many patents are filed under CPC G01R31/261 (for measuring break-down voltage or punch through voltage therefor)?
- Our database includes 36 publications tagged with this CPC code.
- Is patent activity under CPC G01R31/261 growing?
- Publication counts under this code: 3 in 2024 vs 1 in 2025 (latest complete years).