Gate detection circuit of insulated gate bipolar transistor

Patent metadata

Field	Value
Publication number	US-12019115-B2
Application number	US-202017765577-A
Country	US
Kind code	B2
Filing date	Nov 25, 2020
Priority date	Nov 28, 2019
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

The present application provides a gate detection circuit of an insulated gate bipolar transistor. The pulse shaping circuit is configured for shaping an input signal of a signal input device, and outputting a first square wave signal of a high level and a second square wave signal of a low level; and outputting a first square wave signal of the low level and a second square wave signal of the high level; the comparison circuit is configured for: comparing a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor, and outputting a low level; and comparing a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor, and outputting a low level; and the fault output circuit is configured for outputting a gate fault signal.

First claim

What is claimed is:

1. A gate detection circuit of an insulated gate bipolar transistor, wherein the gate detection circuit comprises:
a pulse shaping circuit, configured for shaping an input signal of a signal input device, and
outputting a first square wave signal of a high level and a second square wave signal of a low level when the input signal is at the high level; and
outputting a first square wave signal of the low level and a second square wave signal of the high level when the input signal is at the low level;

a comparison circuit, configured for:
comparing a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the first square wave signal is at the high level, and outputting a low level when the first preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor; and
comparing a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the second square wave signal is at the high level, and outputting a low level when the second preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor; and

a fault output circuit, configured for outputting a gate fault signal when the comparison circuit outputs the low level.

2. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the comparison circuit comprises:
a first triode, configured to be turned on when the first square wave signal is at the high level;
a second triode, configured to be turned on when the second square wave signal is at the high level;
a first comparator, connected to the first triode and configured for comparing the first preset voltage with the voltage of the gate of the insulated gate bipolar transistor when the first triode is turned on; and
a second comparator, connected to the second triode and configured for comparing the second preset voltage with the voltage of the gate of the insulated gate bipolar transistor when the second triode is turned on.

3. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the gate detection circuit further comprises:
an optocoupler isolation circuit, connected between the signal input device and the pulse shaping circuit, and configured for optoelectronic isolation of the input signal.

4. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the gate detection circuit further comprises:
a pulse amplification circuit, connected between the pulse shaping circuit and the insulated gate bipolar transistor, and configured for amplifying the first square wave signal to drive the insulated gate bipolar transistor.

5. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the gate detection circuit further comprises:
a voltage division circuit, connected to the comparison circuit, and configured for converting a voltage of a power supply into the first preset voltage and the second preset voltage.

6. The gate detection circuit of an insulated gate bipolar transistor according to claim 5 , wherein the power supply outputs a positive power supply of +15V and a negative power supply of −5V.

7. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the gate detection circuit further comprises:
a detection power supply circuit, comprising:
a diode, with a negative electrode being connected to the gate of the insulated gate bipolar transistor, and a positive electrode being connected to the comparison circuit; and
a first resistor, with an end being connected to an anode of the diode, and the other end being connected to ta positive power output terminal of a power supply.

8. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the first preset voltage is 7.5V, and the second preset voltage is −2.5V.

9. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the comparison circuit is further configured for:
outputting the high level when the first preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor in a case that the first square wave signal is at the high level; and
outputting the high level when the second preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor in a case that the second square wave signal is at the high level.

10. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the fault output circuit is further configured to not output a fault signal when the comparator circuit outputs the high level.

11. The gate detection circuit of an insulated gate bipolar transistor according to claim 1 , wherein the first preset voltage is 7.5V, and the second preset voltage is −2.5V.

12. A method for gate detection of an insulated gate bipolar transistor, comprising:
shaping a input signal of a signal input device through a pulse shaping circuit, and outputting a first square wave signal of a high level and a second square wave signal of a low level when the input signal is at the high level; and outputting a first square wave signal of the low level and a second square wave signal of the high level when the input signal is at the low level;
comparing, through a comparison circuit, a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the first square wave signal is at the high level, and outputting a low level when the first preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor; and comparing, through the comparison circuit, a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the second square wave signal is at the high level, and outputting a low level when the second preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor; and
outputting, through a fault output circuit, a gate fault signal when the comparison circuit outputs the low level.

13. The method for gate detection of an insulated gate bipolar transistor according to claim 12 , wherein the method further comprises:
outputting the high level when the first preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor in a case that the first square wave signal is at the high level; and
outputting the high level when the second preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor in a case that the second square wave signal is at the high level.

14. The electric vehicle according to claim 12 , wherein the comparison circuit comprises:
a first triode, configured to be turned on when the first square wave signal is at the high level;
a second triode, configured to be turned on when the second square wave signal is at the high level;
a first comparator, connected to the first triode and configured for comparing the first preset voltage with the voltage of the gate of the insulated gate bipolar transistor when the first triode is turned on; and
a second comparator, connected to the second triode and configured for comparing the second preset voltage with the voltage of the gate of the insulated gate bipolar transistor when the second triode is turned on.

15. The electric vehicle according to claim 12 , wherein the gate detection circuit further comprises:
an optocoupler isolation circuit, connected between the signal input device an

Assignees

• Great Wall Motor Co Ltd

Inventors

• Shang Man
• Xu Chunxin
• Zhao Xiyang

Classifications

• G01R19/0038

  Circuits for comparing several input signals and for indicating the result of this comparison, e.g. equal, different, greater, smaller (comparing pulses or pulse trains according to amplitude) · CPC title

• G01R19/1659

  to indicate that the value is within or outside a predetermined range of values (window) (G01R19/16514, G01R19/16519, G01R19/16528 and G01R19/16533 take precedence) · CPC title

• G01R29/027

  Indicating that a pulse characteristic is either above or below a predetermined value or within or beyond a predetermined range of values · CPC title

• G01R31/261

  for measuring break-down voltage or punch through voltage therefor · CPC title

• G01R31/2608 Primary

  for testing bipolar transistors · CPC title