Film formation apparatus and film formation method
US-11142842-B2 · Oct 12, 2021 · US
Epitaxial layer growth
Epitaxial layer growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B7/005 |
| Official title | {Epitaxial layer growth} |
| Display label | Epitaxial layer growth |
| Total patents | 92 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 15 |
| 2017 | 9 |
| 2018 | 10 |
| 2019 | 7 |
| 2020 | 7 |
| 2021 | 8 |
| 2022 | 8 |
| 2023 | 8 |
| 2024 | 6 |
| 2025 | 5 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Bipyramid-templated synthesis of monodisperse noble metal nanocrystals
US-2021276095-A1 · Sep 9, 2021 · US
Core shell particle, method of producing core shell particle, and film
US-11072872-B2 · Jul 27, 2021 · US
Heteroepitaxial structure and method for forming the same, and nanogap electrode
US-2021213707-A1 · Jul 15, 2021 · US
Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
US-10975492-B2 · Apr 13, 2021 · US
Film formation apparatus and method of manufacturing semiconductor device
US-2020240038-A1 · Jul 30, 2020 · US
Film formation apparatus and film formation method
US-2020181795-A1 · Jun 11, 2020 · US
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
US-10655244-B2 · May 19, 2020 · US
Epitaxy substrate and method of manufacturing the same
US-2020075328-A1 · Mar 5, 2020 · US
Two-dimensional perovskite forming material, stacked structure, element, and transistor
US-10563320-B2 · Feb 18, 2020 · US
Film forming method and method of manufacturing semiconductor device
US-2020027730-A1 · Jan 23, 2020 · US
Film forming method and manufacturing method of semiconductor device
US-2020027731-A1 · Jan 23, 2020 · US
Light-emitting element having ZnO transparent electrode and method for manufacturing same
US-10411164-B2 · Sep 10, 2019 · US
Method associated with a crystalline composition and wafer
US-2019249328-A1 · Aug 15, 2019 · US
Ultra low noise materials and devices for cryogenic superconductors and quantum bits
US-2019236476-A1 · Aug 1, 2019 · US
Ultra low noise materials and devices for cryogenic superconductors and quantum bits
US-10318880-B2 · Jun 11, 2019 · US
Preparation of Nanoparticle Materials
US-2019161677-A1 · May 30, 2019 · US
Preparation of nanoparticle materials
US-10227529-B2 · Mar 12, 2019 · US
Crystalline gallium nitride containing flourine
US-10208396-B2 · Feb 19, 2019 · US
Zinc oxide free-standing substrate and method for manufacturing same
US-10156024-B2 · Dec 18, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B7/005?
- CPC C30B7/005 is the Cooperative Patent Classification code for “Epitaxial layer growth.”
- How many patents are filed under CPC C30B7/005 (Epitaxial layer growth)?
- Our database includes 92 publications tagged with this CPC code.
- Is patent activity under CPC C30B7/005 growing?
- Publication counts under this code: 6 in 2024 vs 5 in 2025 (latest complete years).