Zinc oxide free-standing substrate and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10156024-B2
Application number	US-201514951548-A
Country	US
Kind code	B2
Filing date	Nov 25, 2015
Priority date	May 31, 2013
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 μm. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 μm or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate. The present invention can provide a self-supporting zinc oxide substrate being inexpensive and also suitable for having a large area as a preferable alternative material for a zinc oxide single crystal substrate.

First claim

What is claimed is:

1. A self-supporting zinc oxide substrate composed of a plate having two opposed major surfaces and a plurality of zinc-oxide-based single crystal grains connected two-dimensionally in the direction of a horizontal plane parallel to said major surfaces, wherein the plate has a single crystal structure in a direction approximately perpendicular to said horizontal plane, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 μm.

2. The self-supporting zinc oxide substrate according to claim 1 , wherein the zinc oxide-based single crystal grains have a cross-sectional average diameter of 3 μm or greater.

3. The self-supporting zinc oxide substrate according to claim 1 , having a thickness of 20 μm or greater.

4. The self-supporting zinc oxide substrate according to claim 1 , having a diameter of 100 mm or greater.

5. The self-supporting zinc oxide substrate according to claim 1 , wherein the zinc-oxide-based single crystal grains have crystal orientation that is aligned in the approximately normal direction.

6. The self-supporting zinc oxide substrate according to claim 1 , wherein the zinc-oxide-based single crystal grains are doped with an n-type dopant or a p-type dopant.

7. The self-supporting zinc oxide substrate according to claim 1 , wherein the zinc-oxide-based single crystal grains are free from a dopant.

8. A method for manufacturing a self-supporting zinc oxide substrate according to claim 1 , comprising the steps of:
providing an oriented polycrystalline sintered body;
forming a layer with a thickness of 20 μm or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and
removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate.

9. The method according to claim 8 , further comprising the step of forming a seed crystal layer composed of a zinc-oxide-based material on the oriented polycrystalline sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the oriented polycrystalline sintered body, wherein the step is performed prior to forming the layer composed of zinc-oxide-based crystals.

10. The method according to claim 8 , wherein the oriented polycrystalline sintered body comprises one selected from the group consisting of zinc oxide (ZnO), alumina (Al 2 O 3 ), aluminum nitride (AlN), and gallium nitride (GaN) as a main component.

11. The method according to claim 8 , wherein an average grain diameter of grains constituting the oriented polycrystalline sintered body at a plate surface is 1 to 1000 μm.

12. The method according to claim 8 , wherein the layer composed of zinc-oxide-based crystals is formed by way of solid phase epitaxial growth or liquid phase epitaxial growth.

Assignees

• Ngk Insulators Ltd

Inventors

• Watanabe Morimichi
• Yoshikawa Jun
• Yamaguchi Hirofumi
• Nanataki Tsutomu

Classifications

• C30B7/005

  Epitaxial layer growth · CPC title

• C30B28/04

  from liquids · CPC title

• C30B1/10

  by solid state reactions or multi-phase diffusion · CPC title

• C30B7/14

  the crystallising materials being formed by chemical reactions in the solution · CPC title

• C30B29/16 Primary

  Oxides · CPC title