Semiconductor device and semiconductor system including semiconductor device
US-2018097073-A1 · Apr 5, 2018 · US
Film formation apparatus and film formation method
US11142842B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11142842-B2 |
| Application number | US-201916705432-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 6, 2019 |
| Priority date | Dec 11, 2018 |
| Publication date | Oct 12, 2021 |
| Grant date | Oct 12, 2021 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatus includes a portion configured to be exposed to the mist, and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of growing a film using a film formation apparatus configured to supply a mist of a solution to a surface of a substrate to grow the film on the surface of the substrate, the film formation apparatus comprising: a furnace configured to house the substrate and to heat the substrate; a mist supply apparatus configured to supply the mist of the solution to the furnace; a portion configured to be exposed to the mist; and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride, the method comprising: in a state where the substrate is not placed in the furnace, supplying a liquid or mist of the liquid to the material comprising boron nitride so as to coat a surface of the material comprising boron nitride, the liquid comprising a component included in the solution; and in a state where the substrate is placed in the furnace after the coating of the material, supplying the mist of the solution from the mist supply apparatus to the furnace so as to grow the film on the surface of the substrate. 2. The method according to claim 1 , wherein the liquid comprises all of the same components as the solution.
Assignees
Inventors
Classifications
- C23C16/4486Primary
by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title
- C30B25/10Primary
Heating of the reaction chamber or the substrate · CPC title
the crystallising materials being formed by chemical reactions in the solution · CPC title
for ovens with horizontal chambers · CPC title
characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title
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- What does patent US11142842B2 cover?
- A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatu…
- Who is the assignee on this patent?
- Denso Corp, Nat Univ Corp Kyoto Inst Technology
- What technology area does this patent fall under?
- Primary CPC classification C23C16/4486. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 12 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).