Method of growing group III nitride crystals
US-9518340-B2 · Dec 13, 2016 · US
Joining of crystals
Joining of crystals · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B33/06 |
| Official title | Joining of crystals |
| Display label | Joining of crystals |
| Total patents | 522 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 30 |
| 2016 | 40 |
| 2017 | 35 |
| 2018 | 41 |
| 2019 | 49 |
| 2020 | 53 |
| 2021 | 53 |
| 2022 | 52 |
| 2023 | 48 |
| 2024 | 63 |
| 2025 | 45 |
| 2026 | 13 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of manufacturing semiconductor substrate and substrate for semiconductor growth
US-2016351748-A1 · Dec 1, 2016 · US
Method for manufacturing silicon carbide single crystal
US-2016340796-A1 · Nov 24, 2016 · US
Laser crystal components joined with thermal management devices
US-9478936-B2 · Oct 25, 2016 · US
Method for manufacturing a silicon carbide wafer and respective equipment
US-2016307800-A1 · Oct 20, 2016 · US
Wafer producing method
US-2016288250-A1 · Oct 6, 2016 · US
Wafer producing method
US-2016288251-A1 · Oct 6, 2016 · US
Method for manufacturing rectangular parallelepiped-shaped single crystal, rectangular parallelepiped-shaped single crystal, method for manufacturing ceramics, ceramics, piezoelectric element, piezoelectric device, and electronic device
US-2016273125-A1 · Sep 22, 2016 · US
Cordierite sintered body, method for manufacturing the same, composite substrate, and electronic device
US-2016264471-A1 · Sep 15, 2016 · US
Silicon carbide ingot and method for manufacturing silicon carbide substrate
US-2016236375-A1 · Aug 18, 2016 · US
Method of manufacturing silicon carbide substrate
US-2016229086-A1 · Aug 11, 2016 · US
Wafer producing method
US-2016228984-A1 · Aug 11, 2016 · US
Wafer producing method
US-2016228985-A1 · Aug 11, 2016 · US
Method for separating surface layer or growth layer of diamond
US-9410241-B2 · Aug 9, 2016 · US
Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US-9404197-B2 · Aug 2, 2016 · US
Wafer producing method
US-2016193691-A1 · Jul 7, 2016 · US
Method for producing nanocarbon film and nanocarbon film
US-9379000-B2 · Jun 28, 2016 · US
Group III nitride crystal substrates and group III nitride crystal
US-9368568-B2 · Jun 14, 2016 · US
Wafer producing method
US-2016158881-A1 · Jun 9, 2016 · US
Method for improving quality of spalled material layers
US-2016163553-A1 · Jun 9, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B33/06?
- CPC C30B33/06 is the Cooperative Patent Classification code for “Joining of crystals.”
- How many patents are filed under CPC C30B33/06 (Joining of crystals)?
- Our database includes 522 publications tagged with this CPC code.
- Is patent activity under CPC C30B33/06 growing?
- Publication counts under this code: 63 in 2024 vs 45 in 2025 (latest complete years).