Group III nitride crystal substrates and group III nitride crystal

Patent metadata

Field	Value
Publication number	US-9368568-B2
Application number	US-201414470903-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Jun 29, 2009
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×10 16 cm −3 to 4×10 19 cm −3 or a silicon-atom concentration of 6×10 14 cm −3 to 5×10 18 cm −3 , and by having a carrier concentration of 1×10 16 cm −3 to 6×10 19 cm −3 .

First claim

What is claimed is:

1. A Group III nitride crystal substrate having a major surface with plane orientation being any one of [20-21], ([20-2-1], [22-41], and [22-4-1], the Group III nitride crystal substrate further characterized by:
satisfying at least one of either
an oxygen-atom concentration of between 5×10 16 cm −3 and 1×10 19 cm −3 inclusive, and
a silicon-atom concentration of between 6×10 14 cm −3 and 5×10 18 cm −3 inclusive;

having a carrier concentration of between (1×10 16 cm −3 ) and (6×10 19 cm −3 ) inclusive; and
in a cross-section through the crystal substrate perpendicular to either the <1-210> direction or to the <10-10> direction, an in-plane density of planar defects of from not fewer than 0.3 cm −1 to not more than 51 cm −1 .

2. A Group III nitride crystal substrate as recited in claim 1 , being of at least 10 cm 2 area.

3. A Group III nitride crystal substrate as recited in claim 1 , being of at least 40 cm 2 area.

Assignees

• Sumitomo Electric Industries

Inventors

• Uematsu Koji
• Osada Hideki
• Nakahata Seiji
• Fujiwara Shinsuke

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2925

  Surface structures · CPC title

• H10P14/2908

  Nitrides · CPC title