Method for producing nanocarbon film and nanocarbon film

Patent metadata

Field	Value
Publication number	US-9379000-B2
Application number	US-201314435235-A
Country	US
Kind code	B2
Filing date	Aug 7, 2013
Priority date	Oct 15, 2012
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.

First claim

The invention claimed is:

1. A method for producing a nanocarbon film using a hybrid substrate, comprising the steps of:
implanting ions into a surface of a single crystal silicon carbide substrate to form an ion-implanted region,
bonding the ion-implanted surface of the silicon carbide substrate to a surface of a base substrate,
separating the silicon carbide substrate at the ion-implanted region, thus leaving a hybrid substrate having a single crystal silicon carbide-containing thin film transferred onto the base substrate, and
then heating the hybrid substrate so that silicon atoms may sublime from the single crystal silicon carbide-containing thin film, yielding a nanocarbon film.

2. The method for producing a nanocarbon film of claim 1 wherein said base substrate comprises single crystal silicon, sapphire, polycrystalline silicon, alumina, silicon nitride, aluminum nitride or diamond.

3. The method for producing a nanocarbon film of claim 1 wherein a film is formed on at least the surface of the silicon carbide substrate and/or the base substrate to be bonded, the film comprising at least one component selected from the group consisting of silicon oxide, single crystal silicon, polycrystalline silicon, amorphous silicon, alumina, silicon nitride, silicon carbide, aluminum nitride, and diamond.

4. The method for producing a nanocarbon film of claim 1 wherein the silicon carbide substrate has a crystal structure of 4H-SiC, 6H-SiC or 3C-SiC.

5. The method for producing a nanocarbon film of claim 1 wherein the step of forming an ion-implanted region includes implanting ions containing at least hydrogen ions into a surface of the silicon carbide substrate.

6. The method for producing a nanocarbon film of claim 1 wherein the surface of the silicon carbide substrate and/or the base substrate to be bonded is subjected to at least one surface activation treatment selected from the group consisting of ion beam treatment, plasma activation treatment, ozone treatment, acid washing treatment and alkali washing treatment, prior to the bonding step.

7. The method for producing a nanocarbon film of claim 1 wherein after the step of bonding the silicon carbide substrate to the base substrate, the step of separating the silicon carbide substrate at the ion-implanted region includes providing thermal energy, mechanical energy or light energy to the ion-implanted region.

8. The method for producing a nanocarbon film of claim 1 wherein the step of bonding the silicon carbide substrate to the base substrate includes heat treatment at 150° C. or higher.

9. The method for producing a nanocarbon film of claim 1 wherein the hybrid substrate is heated at 1,100° C. or higher for sublimation of silicon atoms.

10. The method for producing a nanocarbon film of claim 1 wherein the hybrid substrate is heated in vacuum for sublimation of silicon atoms.

11. The method for producing a nanocarbon film of claim 1 wherein the nanocarbon film comprises carbon nanotubes, graphene or fullerene.

12. The method for producing a nanocarbon film of claim 1 wherein after the separation step, the silicon carbide substrate is used again for the production of nanocarbon film.

13. A nanocarbon film produced by the method of claim 1 .

Assignees

• Shinetsu Chemical Co

Inventors

• Kawai Makoto
• Kubota Yoshihiro

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P70/10

  Cleaning before device manufacture, i.e. Begin-Of-Line process · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title