Semiconductor phosphide injection synthesis system and control method
US-12383879-B2 · Aug 12, 2025 · US
Gallium phosphide
Gallium phosphide · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B29/44 |
| Official title | Gallium phosphide |
| Display label | Gallium phosphide |
| Total patents | 59 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 3 |
| 2017 | 3 |
| 2019 | 5 |
| 2020 | 4 |
| 2022 | 8 |
| 2023 | 20 |
| 2024 | 9 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of producing large GaAs and GaP infrared windows
US-12203191-B2 · Jan 21, 2025 · US
Method of optimizing the EMI shielding and infrared transparency of GaAs IR windows
US-12203192-B2 · Jan 21, 2025 · US
Optimized heteroepitaxial growth of semiconductors
US-12157956-B2 · Dec 3, 2024 · US
Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion
US-2024352624-A1 · Oct 24, 2024 · US
Optimized heteroepitaxial growth of semiconductors
US-12116695-B2 · Oct 15, 2024 · US
Method of producing large EMI shielded GaAs and GaP infrared windows
US-12084791-B2 · Sep 10, 2024 · US
Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
US-12046471-B1 · Jul 23, 2024 · US
METHOD OF OPTIMIZING THE EMI SHIELDING AND INFRARED TRANSPARENCY OF GaAs IR WINDOWS
US-2024183066-A1 · Jun 6, 2024 · US
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
US-2024184015-A1 · Jun 6, 2024 · US
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS
US-2024183075-A1 · Jun 6, 2024 · US
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
US-2024183065-A1 · Jun 6, 2024 · US
Optimized Heteroepitaxial Growth of Semiconductors
US-2023352302-A1 · Nov 2, 2023 · US
Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
US-11795574-B2 · Oct 24, 2023 · US
Optimized heteroepitaxial growth of semiconductors
US-11795575-B2 · Oct 24, 2023 · US
Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
US-11788202-B2 · Oct 17, 2023 · US
Optimized heteroepitaxial growth of semiconductors
US-11761115-B2 · Sep 19, 2023 · US
Optimized heteroepitaxial growth of semiconductors
US-11761116-B2 · Sep 19, 2023 · US
Optimized Heteroepitaxial Growth of Semiconductors
US-2023148397-A1 · May 11, 2023 · US
Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
US-2023139650-A1 · May 4, 2023 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B29/44?
- CPC C30B29/44 is the Cooperative Patent Classification code for “Gallium phosphide.”
- How many patents are filed under CPC C30B29/44 (Gallium phosphide)?
- Our database includes 59 publications tagged with this CPC code.
- Is patent activity under CPC C30B29/44 growing?
- Publication counts under this code: 9 in 2024 vs 3 in 2025 (latest complete years).