Method of producing large EMI shielded GaAs and GaP infrared windows

Patent metadata

Field	Value
Publication number	US-12084791-B2
Application number	US-202218073183-A
Country	US
Kind code	B2
Filing date	Dec 1, 2022
Priority date	Dec 1, 2022
Publication date	Sep 10, 2024
Grant date	Sep 10, 2024

Abstract

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least λ/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.

First claim

We claim:

1. An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, or a GaP slab having a slab largest dimension that is greater than four inches, said slab being formed by grinding and polishing surrounding sides of a plurality of rectangular parallelepiped slabs, referred to herein as rectangular slabs, and then aligning and contacting the surrounding sides of the rectangular slabs so as to optically bond the rectangular slabs to each other, thereby forming a GaAs monolithic window slab having a largest dimension that is greater than eight inches or a GaP monolithic window slab having a largest dimension that is greater than four inches.

2. The infrared window of claim 1 , wherein the monolithic window slab has a largest dimension that is greater than 12 inches.

3. The infrared window of claim 1 , wherein the surrounding sides of each of the rectangular slabs surround largest faces of the rectangular slabs.

4. The infrared window of claim 1 , wherein all of the rectangular slabs have a common size and shape.

5. The infrared window of claim 1 , further comprising a conductive layer of doped GaAs or GaP applied to at least one face of the monolithic window slab.

6. The infrared window of claim 1 , further comprising an anti-reflective coating applied to at least one face of the monolithic slab.

7. A method of making a GaAs slab having a largest dimension that is greater than eight inches or a GaP slab having a largest dimension that is greater than four inches, the slab being suitable for forming an infrared (IR) transparent window having a largest dimension that is greater than eight inches, the method comprising:
obtaining a boule of GaAs or GaP;
slicing the boule to form a plurality of rectangular parallelepiped slabs, referred to herein as rectangular slabs;
grinding the rectangular slabs to have precisely perpendicular edges;
polishing surrounding sides of each of the rectangular slabs to a high degree of flatness and smoothness; and
aligning the surrounding sides of the rectangular slabs with each other and contacting the surrounding sides together so as to optically bond the rectangular slabs to each other, thereby forming a GaAs monolithic window slab having a largest dimension that is greater than eight inches, or a GaP monolithic window slab having a largest dimension that is greater than four inches.

8. The method of claim 7 , wherein obtaining the boule includes obtaining the boule from a commercial source.

9. The method of claim 7 , wherein polishing surrounding sides of each of the rectangular slabs to a high degree of flatness and smoothness includes polishing the surrounding sides to a flatness of better than λ/10 and to a smoothness with Ra less than 10 nanometers.

10. The method of claim 7 , further comprising grinding faces of the monolithic window slab to remove bevels.

11. The method of claim 7 , further comprising polishing faces of the monolithic window slab.

12. The method of claim 7 , wherein the monolithic window slab has a largest dimension that is greater than 12 inches.

13. The method of claim 7 , wherein the surrounding sides of each of the rectangular slabs surround largest faces of the rectangular slabs.

14. The method of claim 7 , wherein all of the rectangular slabs have a common size and shape.

15. The method of claim 14 , wherein grinding the rectangular slabs to have precisely perpendicular edges includes arranging the rectangular slabs in a stacked configuration, and grinding sides of the stack.

16. The method of claim 14 , wherein polishing surrounding sides of each of the rectangular slabs to a high degree of flatness and smoothness includes arranging the rectangular slabs in a stacked configuration, and polishing sides of the stack.

17. The method of claim 16 , wherein the sides of the stack are polished while the stack is mounted on a precision jig.

18. The method of claim 7 , further comprising applying a conductive layer of doped GaAs or GaP to at least one face of the monolithic window slab.

19. The method of claim 18 , wherein the conductive layer is applied using a vacuum deposition process.

20. The method of claim 7 , further comprising applying an anti-reflective coating to at least one face of the monolithic slab.

Assignees

• Bae Sys Inf & Elect Sys Integ

Inventors

• Schunemann Peter G
• Zawilski Kevin T

Classifications

• Y10T428/162

  Transparent or translucent layer or section · CPC title

• C23C16/30

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title

• C30B29/42 Primary

  Gallium arsenide · CPC title

• C30B29/44

  Gallium phosphide · CPC title

• C23C16/301

  AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi · CPC title