Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

Patent metadata

Field	Value
Publication number	US-11788202-B2
Application number	US-202218046943-A
Country	US
Kind code	B2
Filing date	Oct 17, 2022
Priority date	Jun 6, 2018
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH 3 (arsine), PH 3 (phosphine), H 2 Se (hydrogen selenide), HzTe (hydrogen telluride), SbH 3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H 2 S (hydrogen sulfide), NH 3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

First claim

What is claimed is:

1. A method of performing heteroepitaxy, comprising:
exposing a substrate to
a carrier gas,
a first precursor gas,
a Group II/III element, and

additional precursor gasses (V/VI group precursor), to form a heteroepitaxial growth of one of GaSb directly on the substrate;
wherein the substrate comprises ZnTe, and;
wherein the carrier gas is H 2 ,
wherein the first precursor gas is HCl,
the Group II/III element comprises at least one of Ga; and
wherein the additional precursor gasses comprise at least two or more of H 2 Te (hydrogen telluride) and SbH 3 (hydrogen antimonide, or antimony tri-hydride, or stibine);
flowing the carrier gas over the Group II/III element;
exposing the substrate to the additional precursor gasses in a predetermined ratio of first additional precursor gas to second additional precursor gas (1tf:2tf ratio); and
changing the 1tf:2tf ratio over time.

2. The method of claim 1 , further comprising:
flowing the additional precursor gasses through the furnace at a 1tf:2tf ratio of about 1:0;
heating the substrate to about 500° C.-900° C.; and
changing the 1tf:2tf ratio toward 0:1 over a time period of 1 min-10 hours.

Assignees

• Us Gov Air Force
• Us Air Force

Inventors

• Tassev Vladimir

Classifications

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3424

  being Group IIB-VIA materials · CPC title

• H10P14/3422

  Antimonides · CPC title

• H10P14/3421

  Arsenides · CPC title