Semiconductor phosphide injection synthesis system and control method

Patent metadata

Field	Value
Publication number	US-12383879-B2
Application number	US-202117797081-A
Country	US
Kind code	B2
Filing date	Jul 5, 2021
Priority date	Dec 23, 2020
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

First claim

The invention claimed is:

1. A semiconductor phosphide injection synthesis system comprising a furnace body, a shielding carrier box ( 2 ) arranged above the furnace body by virtue of a lifting mechanism ( 20 ), a phosphorus source carrier ( 11 ) arranged in the shielding carrier box ( 2 ), an injection pipe ( 6 ) arranged below the phosphorus source carrier ( 11 ), and a crucible ( 13 ) arranged at an inner bottom of the furnace body in a matched manner, wherein the phosphorus source carrier ( 11 ) comprises a phosphorus source carrier main body ( 11 - 2 ), a phosphorus source carrier upper cover ( 11 - 1 ), a heating element base ( 4 ) arranged at an inner bottom of the phosphorus source carrier main body ( 11 - 2 ), and a heating element ( 12 ) arranged on the heating element base ( 4 ); a heat insulation layer ( 7 ) is wrapped on an outer wall of the phosphorus source carrier ( 11 ); and an induction coil ( 1 ) is arranged between the heat insulation layer ( 7 ) and an inner wall of the shielding carrier box ( 2 ).

2. The semiconductor phosphide injection synthesis system according to claim 1 , wherein a pressure measurement system is arranged on the phosphorus source carrier upper cover ( 11 - 1 ); the pressure measurement system comprises a pressure-equalizing pipe ( 10 - 2 ) welded to the phosphorus source carrier upper cover ( 11 - 1 ), a solid boron oxide column ( 17 ) arranged in the pressure-equalizing pipe ( 10 - 2 ), a pressure measurement sealing cap ( 10 - 1 ) with a thermocouple a ( 8 ), and an auxiliary heater ( 21 ) arranged on an outer wall of the pressure-equalizing pipe ( 10 - 2 ); the pressure measurement sealing cap ( 10 - 1 ) is welded to an upper end of the pressure-equalizing pipe ( 10 - 2 ); a lower end of the pressure-equalizing pipe ( 10 - 2 ) is provided with an air inlet hole ( 10 - 4 ) communicated with the phosphorus source carrier ( 11 ); an observation scale ( 10 - 3 ) is arranged on the pressure-equalizing pipe ( 10 - 2 ); and an upper end surface of the furnace body is provided with an observation window a ( 18 ).

3. The semiconductor phosphide injection synthesis system according to claim 2 , wherein a thermocouple wire of the thermocouple a ( 8 ) is connected to a sensor on an outer side of the furnace body.

4. The semiconductor phosphide injection synthesis system according to claim 1 , wherein a bottom of the phosphorus source carrier main body ( 11 - 2 ) is provided with an insertion slot ( 11 - 3 ) for accommodating a thermocouple b ( 22 ); the thermocouple b ( 22 ) is “ ”-shaped, an upper end of which is arranged in the insertion slot ( 11 - 3 ) and a left side of which is connected to the furnace body.

5. The semiconductor phosphide injection synthesis system according to claim 1 , wherein an outer wall of the crucible ( 13 ) is provided with a main resistive heater ( 15 ) in a surrounding manner, and an observation window b ( 19 ) matched with the crucible ( 13 ) is arranged in the middle of the furnace body.

Assignees

• The 13Th Research Institute Of China Electronics Tech Group Corporation

Inventors

• Sun Niefeng
• Wang Shujie
• Liu Huisheng
• Sun Tongnian

Classifications

• G01K7/02

  using thermoelectric elements, e.g. thermocouples · CPC title

• C01P2006/40

  Electric properties · CPC title

• C01B25/087 Primary

  of gallium or indium · CPC title

• B01J6/007

  in crucibles · CPC title

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title