Ingot puller apparatus including automated clamp
US-12516440-B2 · Jan 6, 2026 · US
Pulling on a substrate
Pulling on a substrate · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/007 |
| Official title | {Pulling on a substrate} |
| Display label | Pulling on a substrate |
| Total patents | 45 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 2 |
| 2016 | 2 |
| 2017 | 2 |
| 2018 | 4 |
| 2019 | 5 |
| 2020 | 7 |
| 2021 | 4 |
| 2022 | 9 |
| 2023 | 3 |
| 2024 | 5 |
| 2025 | 1 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
US-12338549-B1 · Jun 24, 2025 · US
Ingot puller apparatus including automated clamp
US-2024376631-A1 · Nov 14, 2024 · US
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
US-11987900-B2 · May 21, 2024 · US
Methods for preparing an ingot in an ingot puller apparatus and methods for selecting a side heater length for such apparatus
US-11987899-B2 · May 21, 2024 · US
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
US-11987901-B2 · May 21, 2024 · US
Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
US-11866848-B1 · Jan 9, 2024 · US
Apparatus for manufacturing single crystal
US-11821104-B2 · Nov 21, 2023 · US
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US-11655559-B2 · May 23, 2023 · US
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US-11655560-B2 · May 23, 2023 · US
Methods for growing a single crystal silicon ingot using continuous Czochralski method
US-11408090-B2 · Aug 9, 2022 · US
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
US-2022220636-A1 · Jul 14, 2022 · US
Method for producing group III nitride crystal and seed substrate
US-11377757-B2 · Jul 5, 2022 · US
Seed crystal holder for pulling up single crystal and method of manufacturing silicon single crystal using the same
US-11371160-B2 · Jun 28, 2022 · US
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
US-2022145493-A1 · May 12, 2022 · US
Methods for preparing an ingot in an ingot puller apparatus and methods for selecting a side heater length for such apparatus
US-2022145490-A1 · May 12, 2022 · US
Apparatus for manufacturing single crystal
US-2022136130-A1 · May 5, 2022 · US
Semiconductor crystal growth device
US-2022106703-A1 · Apr 7, 2022 · US
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US-2022056616-A1 · Feb 24, 2022 · US
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US-2021404088-A1 · Dec 30, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/007?
- CPC C30B15/007 is the Cooperative Patent Classification code for “Pulling on a substrate.”
- How many patents are filed under CPC C30B15/007 (Pulling on a substrate)?
- Our database includes 45 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/007 growing?
- Publication counts under this code: 5 in 2024 vs 1 in 2025 (latest complete years).