High resistivity single crystal silicon ingot and wafer having improved mechanical strength

Patent metadata

Field	Value
Publication number	US-11655560-B2
Application number	US-202117471641-A
Country	US
Kind code	B2
Filing date	Sep 10, 2021
Priority date	Jun 8, 2016
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

First claim

What is claimed is:

1. A single crystal silicon wafer comprising:
two major, parallel surfaces, one of which is a front surface of the single crystal silicon wafer and the other of which is a back surface of the single crystal silicon wafer, a circumferential edge joining the front and back surfaces of the single crystal silicon wafer, a bulk region between the front and back surfaces, and a central plane of the single crystal silicon wafer between the front and back surfaces of the single crystal silicon wafer, wherein:
(a) the bulk region comprises germanium at a germanium concentration of at least about 1×10 19 atoms/cm 3 ;
(b) the bulk region comprises interstitial oxygen at an interstitial oxygen concentration of less than about 6 ppma (New ASTM: ASTM F 121, 1980-1983; DIN 50438/1, 1978); and
(c) the bulk region of the single crystal silicon wafer has a resistivity of at least about 10,000 ohm cm.

2. The single crystal silicon wafer of claim 1 wherein the interstitial oxygen concentration is less than about 5 ppma.

3. The single crystal silicon wafer of claim 1 wherein the interstitial oxygen concentration is less than about 4 ppma.

4. The single crystal silicon wafer of claim 1 wherein the interstitial oxygen concentration is less than about 3 ppma.

5. The single crystal silicon wafer of claim 1 wherein the resistivity is at least about 15,000 ohm cm.

6. The single crystal silicon wafer of claim 1 wherein the resistivity is at least about 20,000 ohm cm.

7. The single crystal silicon wafer of claim 1 wherein the germanium concentration is at least about 1×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

8. The single crystal silicon wafer of claim 1 wherein the germanium concentration is at least about 5×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

9. The single crystal silicon wafer of claim 1 further comprising nitrogen at a nitrogen concentration of at least about 5×10 14 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

10. The single crystal silicon wafer of claim 1 further comprising nitrogen at a nitrogen concentration of at least about 1×10 15 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

11. A method of growing a single crystal silicon ingot, the method comprising:
preparing a silicon melt, wherein the silicon melt is prepared by melting polycrystalline silicon in a quartz lined crucible and adding a source of germanium to the quartz lined crucible; and
pulling the single crystal silicon ingot from the silicon melt, the single crystal silicon ingot comprising a central axis, a crown, an end opposite the crown, and a main body between the crown and the opposite end, the main body having a lateral surface and a radius, R, extending from the central axis to the lateral surface, wherein the main body of the single crystal silicon ingot comprises germanium at a germanium concentration of at least about 1×10 19 atoms/cm 3 , further wherein the pulling conditions are sufficient to yield an interstitial oxygen concentration in the main body of the single crystal silicon ingot of less than about 6 ppma (New ASTM: ASTM F 121, 1980-1983; DIN 50438/1, 1978), and further wherein the main body of the single crystal silicon ingot has a resistivity of at least about 10,000 ohm cm.

12. The method of claim 11 wherein the pulling conditions are sufficient to yield an interstitial oxygen concentration in the main body of the single crystal silicon ingot of less than about 5 ppma.

13. The method of claim 11 wherein the pulling conditions are sufficient to yield an interstitial oxygen concentration in the main body of the single crystal silicon ingot of less than about 4 ppma.

14. The method of claim 11 wherein the pulling conditions are sufficient to yield an interstitial oxygen concentration in the main body of the single crystal silicon ingot of less than about 3 ppma.

15. The method of claim 11 wherein the main body of the single crystal silicon ingot has a resistivity of at least about 15,000 ohm cm.

16. The method of claim 11 wherein the main body of the single crystal silicon ingot has a resistivity of at least about 20,000 ohm cm.

17. The method of claim 11 wherein the main body of the single crystal silicon ingot comprises germanium at a germanium concentration of at least about 1×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

18. The method of claim 11 wherein the main body of the single crystal silicon ingot comprises germanium at a germanium concentration of at least about 5×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

19. The method of claim 11 further comprising adding a source of nitrogen to the quartz lined crucible and wherein the main body of the single crystal silicon ingot further comprises nitrogen at a nitrogen concentration of at least about 5×10 14 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

20. The method of claim 11 further comprising adding a source of nitrogen to the quartz lined crucible and wherein the main body of the single crystal silicon ingot further comprises nitrogen at a nitrogen concentration of at least about 1×10 15 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

21. A single crystal silicon ingot comprising:
a central axis, a crown, an end opposite the crown, and a main body between the crown and the opposite end, the main body having a lateral surface and a radius, R, extending from the central axis to the lateral surface, wherein:
(a) the main body of the single crystal silicon ingot comprises germanium at a germanium concentration of at least about 1×10 19 atoms/cm 3 ;
(b) the main body of the single crystal silicon ingot comprises interstitial oxygen at a concentration of less than about 6 ppma (New ASTM: ASTM F 121, 1980-1983; DIN 50438/1, 1978); and
(c) the main body of the single crystal silicon ingot has a resistivity of at least about 10,000 ohm cm.

22. The single crystal silicon ingot of claim 21 wherein the interstitial oxygen concentration is less than about 5 ppma.

23. The single crystal silicon ingot of claim 21 wherein the interstitial oxygen concentration is less than about 4 ppma.

24. The single crystal silicon ingot of claim 21 wherein the interstitial oxygen concentration is less than about 3 ppma.

25. The single crystal silicon ingot of claim 21 wherein the resistivity is at least about 15,000 ohm cm.

26. The single crystal silicon ingot of claim 21 wherein the resistivity is at least about 20,000 ohm cm.

27. The single crystal silicon ingot of claim 21 wherein the germanium concentration is at least about 1×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

28. The single crystal silicon ingot of claim 21 wherein the germanium concentration is at least about 5×10 19 atoms/cm 3 and less than about 1×10 22 atoms/cm 3 .

29. The single crystal silicon ingot of claim 21 further comprising nitrogen at a concentration of at least about 5×10 14 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

30. The single crystal silicon ingot of claim 21 further comprising nitrogen at a concentration of at least about 1×10 15 atoms/cm 3 and less than about 1×10 16 atoms/cm 3 .

Assignees

• Globalwafers Co Ltd

Inventors

• Basak Soubir
• Peidous Igor
• Hudson Carissima Marie
• Lee Hyungmin
• Kim Byungchun
• Falster Robert J

Classifications

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P14/6903

  containing silicon · CPC title

• H10D64/01336

  on single crystalline silicon, e.g. chemical oxidation using a liquid · CPC title

• H10F77/1223

  characterised by the dopants · CPC title

• C30B15/305

  Stirring of the melt · CPC title